The device is very versatile because of the strong drive strength, wide range of the output power supply, high isolation ratings, high CMTI, and superior protection and sensing features. The 1.5-kVRMS working voltage and 12.8-kVPK surge immunity can support both SiC MOSFET and IGBT modules with DC bus voltage up to 2121 V. The device can be used in both low power and high power applications such as traction inverter in HEV/EV, on-board charger and charging pile, motor driver, solar inverter, industrial power supplies, and so forth. The device can drive the high power SiC MOSFET module, IGBT module, or paralleled discrete device directly without external buffer drive circuit based on NPN/PNP bipolar transistor in totem-pole structure, which allows the driver to have more control to the power semiconductor and saves cost and space of the board design. The UCC21737-Q1 can also be used to drive very high power modules or paralleled modules with external buffer stage. The input side can support power supply and microcontroller signals from 3.3 V to 5 V, and the device level shifts the signal to the output side through the reinforced isolation barrier. The device has a wide output power supply range from 13 V to 33 V and supports a wide range of negative power supply. This allows the driver to be used in SiC MOSFET applications, IGBT applications, and many others. The 12-V UVLO benefits the power semiconductor with lower conduction loss and improves system efficiency. As a reinforced isolated single channel driver, the device can be used to drive either a low-side or high-side driver.

The device features extensive protection and monitoring features, which can monitor, report, and protect the system from various fault conditions.

• Fast detection and protection for an overcurrent and short circuit fault. The feature is preferable in a split source SiC MOSFET module or a split emitter IGBT module. For modules with no integrated current mirror or paralleled discrete semiconductors, the traditional desaturation circuit can be modified to implement short circuit protection. The semiconductor is shut down when a fault is detected and the FLT pin is pulled down to indicate the fault detection. The device is latched unless a reset signal is received from the RST/EN pin.
• Soft turn-off feature to protect the power semiconductor from catastrophic breakdown during an overcurrent and short circuit fault. The shutdown energy can be controlled while the overshoot of the power semiconductor is limited.
• UVLO detection to protect the semiconductor from excessive conduction loss. Once the device is detected to be in UVLO mode, the output is pulled down and the RDY pin indicates the power supply is lost. The device is back to normal operation mode once the power supply is out of the UVLO status. The power-good status can be monitored from the RDY pin.
• Active short circuit feature creates phase-to-phase short circuit in the three-phase inverter to protect the battery from overvoltage breakdown.
• Active Miller clamp feature protects the power semiconductor from false turn on by driving an external MOSFET. This feature allows flexibility of board layout design and the pulldown strength of the Miller clamp FET.
• Enable and disable function through the RST/EN pin.
• Short circuit clamping
• Active pulldown