JAJSU20A December 2023 – April 2024 UCC23525
ADVANCE INFORMATION
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The device has ±5-A peak drive strength and is suitable for high power applications. The high drive strength can drive a SiC MOSFET module, IGBT module or paralleled discrete devices directly without extra buffer stage. The device can also be used to drive higher power modules or parallel modules with extra buffer stage. Regardless of the values of VDD, the peak sink and source current can be kept at 5 A. The driver features an important safety function wherein, when the input pins are in floating condition, the OUT is held in low state. The output stage of the driver stage is depicted in Figure 7-4. The driver has rail-to-rail output by implementing an NMOS pull-up with intrinsic bootstrap gate drive. Under DC conditions, a PMOS is used to keep OUT tied to VDD as shown in the figure. The low pullup impedance of the NMOS results in strong drive strength during the turn-on transient, which shortens the charging time of the input capacitance of the power semiconductor and reduces the turn on switching loss.