JAJSNN2B October   2023  – July 2024 UCC25660

PRODUCTION DATA  

  1.   1
  2. 特長
  3. アプリケーション
  4. 概要
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Power Proportional Control
        1. 7.3.1.1 Voltage Feedforward
      2. 7.3.2 VCR Synthesizer
      3. 7.3.3 Feedback Chain (Control Input)
      4. 7.3.4 Adaptive Dead-Time
      5. 7.3.5 Input Voltage Sensing
        1. 7.3.5.1 Brown in and Brown out Tresholds and Options
        2. 7.3.5.2 Output OVP and External OTP
      6. 7.3.6 Resonant Tank Current Sensing
    4. 7.4 Protections
      1. 7.4.1 Zero Current Switching (ZCS) Protection
      2. 7.4.2 Minimum Current Turn-off During Soft Start
      3. 7.4.3 Cycle by Cycle Current Limit and Short Circuit Protection
      4. 7.4.4 Overload (OLP) Protection
      5. 7.4.5 VCC OVP Protection
    5. 7.5 Device Functional Modes
      1. 7.5.1 Startup
        1. 7.5.1.1 With HV Startup
        2. 7.5.1.2 Without HV Startup
      2. 7.5.2 Soft Start Ramp
        1. 7.5.2.1 Startup Transition to Regulation
      3. 7.5.3 Light Load Management
        1. 7.5.3.1 Operating Modes (Burst Pattern)
        2. 7.5.3.2 Mode Transition Management
        3. 7.5.3.3 Burst Mode Threshold Programming
        4. 7.5.3.4 PFC On/Off
      4. 7.5.4 X-Capacitor Discharge
        1. 7.5.4.1 Detecting Through HV Pin Only
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  LLC Power Stage Requirements
        2. 8.2.2.2  LLC Gain Range
        3. 8.2.2.3  Select Ln and Qe
        4. 8.2.2.4  Determine Equivalent Load Resistance
        5. 8.2.2.5  Determine Component Parameters for LLC Resonant Circuit
        6. 8.2.2.6  LLC Primary-Side Currents
        7. 8.2.2.7  LLC Secondary-Side Currents
        8. 8.2.2.8  LLC Transformer
        9. 8.2.2.9  LLC Resonant Inductor
        10. 8.2.2.10 LLC Resonant Capacitor
        11. 8.2.2.11 LLC Primary-Side MOSFETs
        12. 8.2.2.12 Design Considerations for Adaptive Dead-Time
        13. 8.2.2.13 LLC Rectifier Diodes
        14. 8.2.2.14 LLC Output Capacitors
        15. 8.2.2.15 HV Pin Series Resistors
        16. 8.2.2.16 BLK Pin Voltage Divider
        17. 8.2.2.17 ISNS Pin Differentiator
        18. 8.2.2.18 TSET Pin
        19. 8.2.2.19 OVP/OTP Pin
        20. 8.2.2.20 Burst Mode Programming
        21. 8.2.2.21 Application Curves
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 VCCP Pin Capacitor
      2. 8.3.2 Boot Capacitor
      3. 8.3.3 V5P Pin Capacitor
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
        1. 8.4.2.1 Schematics
        2. 8.4.2.2 Schematics
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Zero Current Switching (ZCS) Protection

ZCS protection is a necessary function for LLC converters to avoid crossing over into the capacitive region of operation. In the capacitive region, the MOSFETs experience severe reverse recovery which can lead to damage to the LLC power stage. In addition, the gain vs frequency relationship inverts in the capacitive region and can cause the converter to completely lose regulation of the power stage.

The goal of the ZCS protection is to make sure that the MOSFET can be turned off before the current inverts thereby eliminating possibility of a hard reverse recovery of the MOSFET's body diode. This can increase the reliability of the power stage. The minimum turn off current is set at a threshold which can increase the chances of achieving ZVS or close to ZVS switching for switches under this condition.

Couple with dead time engine which looks at both the slew done signal and the IPOL signal, we can make sure that opposite MOSFET turns-on at the valley point of the Vds voltage, providing lower turn-on losses.

UCC25660 ZCS Protection Figure 7-8 ZCS Protection

When operation nears the inductive/capacitive boundary, the resonant current decreases before the gate turn is turned off. If the ISNS waveform is less than the VISNS_ZCS threshold, the gate pulse is terminated early instead of waiting for the VCR waveform to cross the VTH or VTL boundary. This early termination scheme is capable of leaving enough resonant current at the gate turn-off edge to drive the ZVS transition during the dead-time.

The ISNS signal is fed to two ZCS comparators. As there is a dedicated comparator for when the HO is on and for when the LO is on, the other comparator output is ignored.

UCC25660 ZCS Prevention Scheme when the
                    High-Sde MOSFET is On Figure 7-9 ZCS Prevention Scheme when the High-Sde MOSFET is On

The shape of the resonant current well below the resonant frequency poses some challenge for detecting the correct falling edge of the resonant current waveform. The UCC25660x implements additional logic to make sure that the correct falling edge of the ISNS signal is detected to avoid false tripping.

To improve robustness against noise, the ISNS ZCS comparators are blanked at the rising edge of HO or LO gate. The same blanking time tlebis used for both the VCR comparators and the ISNS ZCS comparators.

When a ZCS event is detected, internally the Soft Start ramp voltage is slowly reduced. When the internal soft start ramps down, the switching frequency is also forced to increase further, forcing the system out of Capacitive region.

In the event of a persistent ZCS condition, the controller ceases switching action and move to the fault state. A configurable time-out is used to declare a persistent ZCS fault condition.