SLUSAT7G November   2011  – July 2024 UCC27211

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stages
      2. 6.3.2 Undervoltage Lockout (UVLO)
      3. 6.3.3 Level Shift
      4. 6.3.4 Boot Diode
      5. 6.3.5 Output Stages
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input Threshold Type
        2. 7.2.2.2 VDD Bias Supply Voltage
        3. 7.2.2.3 Peak Source and Sink Currents
        4. 7.2.2.4 Propagation Delay
        5. 7.2.2.5 Power Dissipation
      3. 7.2.3 Application Curves
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
    3. 9.3 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

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発注情報

6.1 Overview

The UCC27211 device is designed to drive both the high side and low side of N-channel MOSFETs in a half-/full-bridge or synchronous buck configuration. The floating high-side driver can operate with supply voltages of up to 120V. This allows for N-channel MOSFET control in half-bridge, full-bridge, push pull, two-switch forward and active clamp forward converters.

The UCC27211 device feature 3.7A source and 4.5A sink capability, industry best-in-class switching characteristics and a host of other features listed in Table 6-1. These features combine to ensure efficient, robust and reliable operation in high-frequency switching power circuits.

Table 6-1 UCC27211 Highlights
FEATUREBENEFIT
3.7A source and 4.5A sinkHigh peak current ideal for driving large power MOSFETs with minimal power loss (fast-drive capability at Miller plateau)
Input pins (HI and LI) can directly handle –10VDC up to 20VDCIncreased robustness and ability to handle under/overshoot. Can interface directly to gate-drive transformers without having to use rectification diodes
120V internal boot diodeProvides voltage margin to meet telecom 100V surge requirements
Switch node (HS pin) able to handle –(24 – VDD) V maximum for 100nsAllows the high-side channel to have extra protection from inherent negative voltages caused parasitic inductance and stray capacitance.
Robust ESD circuitry to handle voltage spikesExcellent immunity to large dV/dT conditions
20ns propagation delay with 7.2ns / 5.5ns rise/fall TimesBest-in-class switching characteristics and extremely low-pulse transmission distortion
4ns (typ) delay matching between channelsAvoids transformer volt-second offset in bridge
Symmetrical UVLO circuitEnsures high-side and low-side shut down at the same time
TTL optimized thresholds with increased hysteresisComplementary to analog or digital PWM controllers. Increased hysteresis offers added noise immunity

In the UCC27211 device the high side and low side each have independent inputs which allow maximum flexibility of input control signals in the application. The boot diode for the high-side driver bias supply is internal to the device. The UCC27211 is the TTL or logic compatible version. The high-side driver is referenced to the switch node (HS) which is typically the source pin of the high-side MOSFET and drain pin of the low-side MOSFET. The low-side driver is referenced to VSS which is typically ground. The functions contained are the input stages, UVLO protection, level shift, boot diode, and output driver stages.