SLUSAT7G November 2011 – July 2024 UCC27211
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
PIN | I/O | DESCRIPTION | ||
---|---|---|---|---|
NAME | D/DDA/DRM | DPR | ||
VDD | 1 | 1 | P | Positive supply to the lower-gate driver. Decouple this pin to VSS (GND). Typical decoupling capacitor range is 0.22µF to 4.7µF (See (2)). |
HB | 2 | 2 | P | High-side bootstrap supply. The bootstrap diode is on-chip but the external bootstrap capacitor is required. Connect positive side of the bootstrap capacitor to this pin. Typical range of HB bypass capacitor is 0.022µF to 0.1µF. The capacitor value is dependant on the gate charge of the high-side MOSFET and should also be selected based on speed and ripple criteria |
HO | 3 | 3 | O | High-side output. Connect to the gate of the high-side power MOSFET. |
HS | 4 | 4 | P | High-side source connection. Connect to source of high-side power MOSFET. Connect the negative side of bootstrap capacitor to this pin. |
HI | 5 | 7 | I | High-side input.(3) |
LI | 6 | 8 | I | Low-side input.(3) |
VSS | 7 | 9 | G | Negative supply terminal for the device which is generally grounded. |
LO | 8 | 10 | O | Low-side output. Connect to the gate of the low-side power MOSFET. |
N/C | — | 5/6 | — | Not connected. |
PowerPAD™(1) | Pad | Pad | G | Used on the DDA, DRM and DPR packages only. Electrically referenced to VSS (GND). Connect to a large thermal mass trace or GND plane to dramatically improve thermal performance. |