SLUSAT7G November   2011  – July 2024 UCC27211

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stages
      2. 6.3.2 Undervoltage Lockout (UVLO)
      3. 6.3.3 Level Shift
      4. 6.3.4 Boot Diode
      5. 6.3.5 Output Stages
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input Threshold Type
        2. 7.2.2.2 VDD Bias Supply Voltage
        3. 7.2.2.3 Peak Source and Sink Currents
        4. 7.2.2.4 Propagation Delay
        5. 7.2.2.5 Power Dissipation
      3. 7.2.3 Application Curves
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
    3. 9.3 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

4 Pin Configuration and Functions

UCC27211
Table 4-1 Pin Functions
PIN I/O DESCRIPTION
NAME D/DDA/DRM DPR
VDD 1 1 P Positive supply to the lower-gate driver. Decouple this pin to VSS (GND). Typical decoupling capacitor range is 0.22µF to 4.7µF (See (2)).
HB 2 2 P High-side bootstrap supply. The bootstrap diode is on-chip but the external bootstrap capacitor is required. Connect positive side of the bootstrap capacitor to this pin. Typical range of HB bypass capacitor is 0.022µF to 0.1µF. The capacitor value is dependant on the gate charge of the high-side MOSFET and should also be selected based on speed and ripple criteria
HO 3 3 O High-side output. Connect to the gate of the high-side power MOSFET.
HS 4 4 P High-side source connection. Connect to source of high-side power MOSFET. Connect the negative side of bootstrap capacitor to this pin.
HI 5 7 I High-side input.(3)
LI 6 8 I Low-side input.(3)
VSS 7 9 G Negative supply terminal for the device which is generally grounded.
LO 8 10 O Low-side output. Connect to the gate of the low-side power MOSFET.
N/C — 5/6 — Not connected.
PowerPAD™(1) Pad Pad G Used on the DDA, DRM and DPR packages only. Electrically referenced to VSS (GND). Connect to a large thermal mass trace or GND plane to dramatically improve thermal performance.
(1) The PowerPAD™ is not directly connected to any leads of the package. However it is electrically and thermally connected to the substrate which is the ground of the device.
(2) For cold temperature applications we recommend the upper capacitance range. Attention should also be made to PCB layout - see Section 9.
(3) HI or LI input is assumed to connect to a low impedance source signal. The source output impedance is assumed less than 100Ω. If the source impedance is greater than 100Ω, add a bypassing capacitor, each, between HI and VSS and between LI and VSS. The added capacitor value depends on the noise levels presented on the pins, typically from 1 nF to 10nF should be effective to eliminate the possible noise effect. When noise is present on two pins, HI or LI, the effect is to cause HO and LO malfunctions to have wrong logic outputs.