11 Revision History
Changes from Revision A (January 2016) to Revision B (July 2024)
- Changed document title to reflect the device's key features. Go
- Changed several specifications to reflect the device
characteristics.Go
- Changes Features section: 1) Changed CDM classification level to
follow latest JEDEC standard, no change in actual HBM rating (From: C6. To: C3).
2) Changed junction temperature range specification (From: -40°C to 140°C. To:
-40°C to 150°C). 3) Changed peak currents to reflect specification, no change in
actual drive strength (From: 4A/4A. To: 3.7A/4.5A). 4) Deleted 0.9-Ω Pullup and
Pulldown Resistance since it is not specified in the Electrical
Characteristics.Go
- Updated Applications section with list of top 5 typical
applications.Go
- Changed in Description section: 1) Added new D (SOIC, 8) package
variant. 2) Changed peak current to display typical pull-up/pull-down, no chang
in actual specification (From: 4A4/A. To: 3.7A/4.5A). 3) Deleted pullup/pulldown
resistance information since this is not an actual specification in the
electrical charactersitics table. 4) Updated propagation delay plot with new
data. 5) Changed HS transient tolerance to match the specification in the
Absolute Maximum table (From: -18V. To: -(24-VDD)V. Go
- Updated Recommended Operating Conditions: Operating Junction
Temperature maximum changed from 140°C to 150°C.Go
- Updated Thermal Information section to reflect device
characteristics. Go
- Updated Supply Currents specifications in the Electrical
Characteristics table: 1) Minimum specification removed for IDD,
IDDO, IHB and IHBO. 2) IDD
typical changed (From: 0.085mA. To: 0.11mA). 3) IDDO typical changed
(From: 2.5mA. To: 1.4mA). 4) IDDO maximum changed (From: 6.5mA. To:
3mA. 5) IHBO typical changed (From: 2.5mA. To: 1.3mA). 6)
IHBO maximum changed (From: 5.1mA. To: 3mA). 8) IHBS
test condition changed to match VHS maximum recommended operating
conditions (From: 115V. To: 105V). 9) IHBSO typical changed (From:
0.07mA. To: 0.03mA). 10) IHBSO maximum changed (From: 1.2mA. To:
1mA). Go
- Updated Bootstrap diode specifications in the Electrical
Characteristics table: 1) VF maximum changed (From: 0.8V. To: 0.85V).
2) VFI typical changed (From: 0.85V. To: 0.9V), and maximum changed
(From: 0.95V. To: 1.05V). 3) RD test conditions changed (From: 100mA
and 80mA. To: 180mA and 160mA). 4) RD typical changed (From: 0.5Ω.
To: 0.55Ω). Go
- Updated LO/HO Gate Driver specifications in the Electrical
Characteristics table: 1) Minimum specification removed for VLOL,
VLOH, VHOL, VHOH. 2) VLOL and
VHOL typical changed (From 0.1V. To 0.07V). 3) VLOH
and VHOH typical changed (From: 0.16V. To: 0.11V).Go
- Updated Propagation Delays specifications in the Switching
Characteristics table: 1) Changed TDLFF and TDHFF typicals
(From: 16ns. To: 19ns). Go
- Updated Output Rise and Fall Time specifications in the Switching
Characteristis table: 1) tR typical changed (From: 0.36us. To:
0.27us). 2) tF typical changed (From: 0.15us. To: 0.16us). Go
- Updated Switching Characteristics - Miscellaneous table:
tIN_PW maximum changed (From: 50ns. To: 40ns).Go
- Updated all plots in Typical Characteristics section to reflect the
typical specification of the device. Go
- Changed typical specifications listed in the Overview section to
match the device specifications in the Electrical Characteristics
table.Go
- Changed Input Stages section to match the input pulldown resistance typical
specification in the electrical characteristics table (From: 70kΩ. To: 68kΩ). Go
- Changed application curves to display propagation delay and
rise/fall time plots. Go
Changes from Revision * (December 2015) to Revision A (January 2016)
- Changed marketing status from product preview to production
data.Go