JAJSC45C August   2013  – October 2015 UCC27211A

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 改訂履歴
  5. 5 Description (continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics
    6. 7.6  Switching Characteristics: Propagation Delays
    7. 7.7  Switching Characteristics: Delay Matching
    8. 7.8  Switching Characteristics: Output Rise and Fall Time
    9. 7.9  Switching Characteristics: Miscellaneous
    10. 7.10 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input Stages
      2. 8.3.2 Undervoltage Lockout (UVLO)
      3. 8.3.3 Level Shift
      4. 8.3.4 Boot Diode
      5. 8.3.5 Output Stages
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Threshold Type
        2. 9.2.2.2 VDD Bias Supply Voltage
        3. 9.2.2.3 Peak Source and Sink Currents
        4. 9.2.2.4 Propagation Delay
        5. 9.2.2.5 Power Dissipation
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントのサポート
      1. 12.1.1 関連資料
    2. 12.2 コミュニティ・リソース
    3. 12.3 商標
    4. 12.4 静電気放電に関する注意事項
    5. 12.5 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Supply voltage range, VDD(2), VHB – VHS –0.3 20 V
Input voltages on LI and HI, VLI, VHI –10 20 V
Output voltage on LO, VLO DC –0.3 VDD + 0.3 V
Repetitive pulse < 100 ns(3) –2 VDD + 0.3
Output voltage on HO, VHO DC VHS – 0.3 VHB + 0.3 V
Repetitive pulse < 100 ns(3) VHS – 2 VHB + 0.3
Voltage on HS, VHS DC –1 115 V
Repetitive pulse < 100 ns(3) –(24 V – VDD) 115
Voltage on HB, VHB –0.3 120 V
Operating virtual junction temperature range, TJ –40 150 °C
Storage temperature, TSTG –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to VSS unless otherwise noted. Currents are positive into and negative out of the specified terminal.
(3) Verified at bench characterization. VDD is the value used in an application design.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

all voltages are with respect to VSS; currents are positive into and negative out of the specified terminal. –40°C < TJ = TA < 140°C (unless otherwise noted)
MIN NOM MAX UNIT
Supply voltage range, VDD, VHB – VHS 8 12 17 V
Voltage on HS, VHS –1 105 V
Voltage on HS, VHS (repetitive pulse < 100 ns) –(24 V – VDD) 110 V
Voltage on HB, VHB VHS + 8,
VDD – 1		 VHS + 17,
115		 V
Voltage slew rate on HS 50 V/ns
Operating junction temperature –40 140 °C

7.4 Thermal Information

THERMAL METRIC(1) UCC27211A UNIT
D (SOIC) DRM (SON)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 111.8 37.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 56.9 47.2 °C/W
RθJB Junction-to-board thermal resistance 53.0 9.6 °C/W
ψJT Junction-to-top characterization parameter 7.8 2.8 °C/W
ψJB Junction-to-board characterization parameter 52.3 9.4 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a 3.6 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

VDD = VHB = 12 V, VHS = VSS = 0 V, no load on LO or HO, TA = TJ = –40°C to 140°C, (unless otherwise noted)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
SUPPLY CURRENTS
IDD VDD quiescent current V(LI) = V(HI) = 0 V 0.05 0.085 0.17 mA
IDDO VDD operating current f = 500 kHz, CLOAD = 0 2.1 2.6 6.5 mA
2.1 2.5 6.5 mA
IHB Boot voltage quiescent current V(LI) = V(HI) = 0 V 0.015 0.065 0.1 mA
IHBO Boot voltage operating current f = 500 kHz, CLOAD = 0 1.5 2.5 5.1 mA
IHBS HB to VSS quiescent current V(HS) = V(HB) = 115 V 0.0005 1 µA
IHBSO HB to VSS operating current f = 500 kHz, CLOAD = 0 0.07 1.2 mA
INPUT
VHIT Input voltage threshold 1.9 2.3 2.7 V
VLIT Input voltage threshold 1.3 1.6 1.9 V
VIHYS Input voltage hysteresis 700 mV
RIN Input pulldown resistance 68 kΩ
UNDER-VOLTAGE LOCKOUT (UVLO)
VDDR VDD turnon threshold 6.2 7 7.8 V
VDDHYS Hysteresis 0.5 V
VHBR VHB turnon threshold 5.6 6.7 7.9 V
VHBHYS Hysteresis 1.1 V
BOOTSTRAP DIODE
VF Low-current forward voltage IVDD-HB = 100 µA 0.65 0.8 V
VFI High-current forward voltage IVDD-HB = 100 mA 0.85 0.95 V
RD Dynamic resistance, ΔVF/ΔI IVDD-HB = 100 mA and 80 mA 0.3 0.5 0.85 Ω
LO GATE DRIVER
VLOL Low-level output voltage ILO = 100 mA 0.05 0.1 0.19 V
VLOH High level output voltage ILO = –100 mA, VLOH = VDD – VLO 0.1 0.16 0.29 V
Peak pull-up current(3) VLO = 0 V 3.7 A
Peak pull-down current(3) VLO = 12 V 4.5 A
HO GATE DRIVER
VHOL Low-level output voltage IHO = 100 mA 0.05 0.1 0.19 V
VHOH High-level output voltage IHO = –100 mA, VHOH = VHB – VHO 0.1 0.16 0.29 V
Peak pull-up current(3) VHO = 0 V 3.7 A
Peak pull-down current(3) VHO = 12 V 4.5 A
(1) Typical values for TA = 25°C.
(2) IF: Forward current applied to bootstrap diode, IREV: Reverse current applied to bootstrap diode.
(3) Ensured by design.

7.6 Switching Characteristics: Propagation Delays

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TDLFF VLI falling to VLO falling CLOAD = 0 10 16 30 ns
TDHFF VHI falling to VHO falling 10 16 30 ns
TDLRR VLI rising to VLO rising 10 20 42 ns
TDHRR VHI rising to VHO rising 10 20 42 ns

7.7 Switching Characteristics: Delay Matching

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TMON From HO OFF to LO ON TJ = 25°C 4 9.5 ns
TJ = –40°C to 140°C 4 17
TMOFF From LO OFF to HO ON TJ = 25°C 4 9.5 ns
TJ = –40°C to 140°C 4 17

7.8 Switching Characteristics: Output Rise and Fall Time

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tR LO rise time CLOAD = 1000 pF, from 10% to 90% 7.2 ns
tR HO rise time 7.2 ns
tF LO fall time CLOAD = 1000 pF, from 90% to 10% 5.5 ns
tF HO fall time 5.5 ns
tR LO, HO CLOAD = 0.1 µF, (3 V to 9 V) 0.36 0.6 µs
tF LO, HO CLOAD = 0.1 µF, (9 V to 3 V) 0.15 0.4 µs

7.9 Switching Characteristics: Miscellaneous

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Minimum input pulse width that changes the output 50 ns
Bootstrap diode turnoff time(3)(2) IF = 20 mA, IREV = 0.5 A(1) 20 ns
UCC27211A fig22_lus746.gif Figure 1. Timing Diagram

7.10 Typical Characteristics

UCC27211A 0001_IDD_IHB_vs_VDD_VHB_lusat7.gif
Figure 2. Quiescent Current vs Supply Voltage
UCC27211A 0003_UCC27211_IDDO_vs_Freq_lusat7.gif
Figure 4. IDD Operating Current vs Frequency
UCC27211A 0005_VIHL_vs_VDD_lusat7.gif
Figure 6. Input Threshold vs Supply Voltage
UCC27211A 0007_VOH_vs_Temp_lusat7.gif
Figure 8. LO and HO High-Level Output Voltage
vs Temperature
UCC27211A 0009_UVLO_vs_Temp_lusat7.png
Figure 10. Undervoltage Lockout Threshold
vs Temperature
UCC27211A 0011_UCC27210_Delay_vs_Temp_lusat7.gif
Figure 12. Propagation Delays vs Temperature
UCC27211A 0014_UCC27211_Delay_vs_VDD_lusat7.gif
Figure 14. Propagation Delays vs Supply Voltage
UCC27211A out_new_lusay7.png
Figure 16. Output Current vs Output Voltage
UCC27211A 0002_UCC27210_IDDO_vs_Freq_lusat7.gif
Figure 3. IDD Operating Current vs Frequency
UCC27211A 0004_IHBO_vs_Freq_lusat7.gif
Figure 5. Boot Voltage Operating Current vs
Frequency (HB To HS)
UCC27211A 0006_VIHL_vs_Temp_lusat7.gif
Figure 7. Input Thresholds vs Temperature
UCC27211A 0008_VOL_vs_Temp_lusat7.gif
Figure 9. LO and HO Low-Level Output Voltage
vs Temperature
UCC27211A 0010_UVLO_HYS_vs_Temp_lusat7.png
Figure 11. Undervoltage Lockout Threshold Hysteresis
vs Temperature
UCC27211A 0012_UCC27211_Delay_vs_Temp_lusat7.gif
Figure 13. Propagation Delays vs Temperature
UCC27211A 0015_DelayMatching_vs_Temp_lusat7.gif
Figure 15. Delay Matching vs Temperature
UCC27211A 0017_DiodeCurrent_vs_DiodeVoltage_lusat7.png
Figure 17. Diode Current vs Diode Voltage