SLVSC90B August 2013 – August 2015 UCC27518A-Q1 , UCC27519A-Q1
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage | VDD | –0.3 | 20 | V |
OUTA, OUTB voltage | DC | –0.3 | VDD + 0.3 | V |
Repetitive pulse < 200 ns(5) | –2 | VDD + 0.3 | ||
Output continuous current | IOUT_DC (source/sink) | 0.3 | A | |
Output pulsed current (0.5 µs) | IOUT_pulsed (source/sink) | 4 | A | |
IN+, IN–, EN(4) | –6 | 20 | V | |
Operating virtual junction temperature, TJ | –40 | 150 | °C | |
Lead temperature | Soldering, 10 s | 300 | °C | |
Reflow | 260 | |||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±2500 | V |
Charged-device model (CDM), per AEC Q100-011 | ±1500 |
MIN | NOM | MAX | UNIT | |
---|---|---|---|---|
Supply voltage, VDD | 4.5 | 12 | 18 | V |
Input voltage, (IN+ and IN–) and enable (EN) | 0 | 18 | V | |
Operating ambient temperature | –40 | 140 | °C |
THERMAL METRIC(1) | UCC27518A-Q1 UCC27519A-Q1 |
UNIT | |
---|---|---|---|
DBV (SOT-23) | |||
5 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 215.5 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 136.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 43.2 | °C/W |
ψJT | Junction-to-top characterization parameter | 20.3 | °C/W |
ψJB | Junction-to-board characterization parameter | 42.3 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
BIAS CURRENTS | |||||||
IDD(off) | Startup current | VDD = 3.4 V | IN+ = VDD (UC27519A-Q1) IN– = GND (UCC27518A-Q1) |
51 | 85 | 123 | µA |
IN– = VDD (UCC27518A-Q1) | 51 | 70 | 103 | ||||
IN+ = GND (UC27519A-Q1) | 51 | 70 | 110 | ||||
UNDERVOLTAGE LOCKOUT (UVLO) | |||||||
VON | Supply start threshold | TA = 25°C | 3.85 | 4.2 | 4.57 | V | |
TA = –40°C to 140°C | 3.8 | 4.2 | 4.67 | ||||
VOFF | Minimum operating voltage after supply start | 3.45 | 3.9 | 4.35 | V | ||
VDD_H | Supply voltage hysteresis | 0.19 | 0.3 | 0.45 | V | ||
INPUTS (IN+, IN–) | |||||||
VIN_H | Input signal high threshold | VDD = 4.5 V | 55 | 62 | %VDD | ||
VIN_L | Input signal low threshold | 31 | 39 | ||||
VIN_HYS | Input signal hysteresis | 16 | |||||
VIN_H | Input signal high threshold | VDD = 12 V | 55 | 59 | %VDD | ||
VIN_L | Input signal low threshold | 31 | 39 | ||||
VIN_HYS | Input signal hysteresis | 16 | |||||
VIN_H | Input signal high threshold | VDD = 18 V | 55 | 58 | %VDD | ||
VIN_L | Input signal low threshold | 35 | 38 | ||||
VIN_HYS | Input signal hysteresis | 17 | |||||
ENABLE (EN) | |||||||
VEN_H | Enable signal high threshold | VDD = 12 V | 2.1 | 2.3 | V | ||
VEN_L | Enable signal low threshold | 1 | 1.25 | ||||
VEN_HYS | Enable hysteresis | 0.86 | |||||
SOURCE AND SINK CURRENT | |||||||
ISRC/SNK | Source/sink peak current(1) | CLOAD = 0.22 µF, FSW = 1 kHz | ±4 | A | |||
OUTPUTS (OUT) | |||||||
VDD–VOH | High output voltage | VDD = 12 V IOUT = –10 mA |
50 | 90 | mV | ||
VDD = 4.5 V IOUT = –10 mA |
60 | 130 | |||||
VOL | Low output voltage | VDD = 12 IOUT = 10 mA |
5 | 11 | mV | ||
VDD = 4.5 V IOUT = 10 mA |
6 | 12 | |||||
ROH | Output pullup resistance(2) | VDD = 12 V IOUT = –10 mA |
5 | 7.5 | Ω | ||
VDD = 4.5 V IOUT = –10 mA |
5.0 | 11 | |||||
ROL | Output pulldown resistance | VDD = 12 V IOUT = 10 mA |
0.5 | 1 | Ω | ||
VDD = 4.5 V IOUT = 10 mA |
0.6 | 1.2 |