JAJSC56F December   2012  – March 2018 UCC27611

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      代表的なアプリケーションの図
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 VDD and Undervoltage Lockout
      2. 7.3.2 Operating Supply Current
      3. 7.3.3 Input Stage
      4. 7.3.4 Enable Function
      5. 7.3.5 Output Stage
      6. 7.3.6 Low Propagation Delays
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Gate Drive Supply Voltage
        2. 8.2.2.2 Input Configuration
        3. 8.2.2.3 Output Configuration
        4. 8.2.2.4 Power Dissipation
        5. 8.2.2.5 Thermal Considerations
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 ドキュメントのサポート
      1. 11.1.1 関連資料
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 コミュニティ・リソース
    4. 11.4 商標
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 Glossary
  12. 12メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.1 Overview

The UCC27611 is a single-channel, high-speed, gate driver capable of effectively driving MOSFET power switches (specifically addressing enhancement mode GaN FETs) by up to 4-A source and 6-A sink peak current. Strong sink capability in asymmetrical drive boosts immunity against parasitic Miller turnon effect. The drive voltage VREF is precisely regulated by internal linear regulator to 5 V, which is optimized for driving enhancement mode GaN FET. The input threshold of UCC27611 is based on TTL and CMOS compatible low-voltage logic, which is fixed and independent of VDD supply voltage. The 0.95-V typical hysteresis offers excellent noise immunity. For safety reason, when the input pins are in a floating condition, the internal input pullup and pulldown resistors hold the output LOW. The device also features a split-output configuration, where the gate-drive current is sourced through the OUTH pin and sunk through the OUTL pin. This pin arrangement allows the user to apply independent turnon and turnoff resistors to the OUTH and OUTL pins, respectively, and easily control the switching slew rates. The driver has rail-to-rail drive capability and extremely small propagation delay, with minimized tolerances and variations. Package and pinout with minimum parasitic inductances reduce the rise and fall time, and limit the ringing allows efficient operation at high frequencies.