JAJSC34B March   2012  – December 2023 UCC28070A

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Pin Configuration and Functions
    1. 4.1 Pin Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Interleaving
      2. 6.3.2  Programming the PWM Frequency and Maximum Duty-Cycle Clamp
      3. 6.3.3  Frequency Dithering (Magnitude and Rate)
      4. 6.3.4  External Clock Synchronization
      5. 6.3.5  Multi-phase Operation
      6. 6.3.6  VSENSE and VINAC Resistor Configuration
      7. 6.3.7  VSENSE and VINAC Open-Circuit Protection
      8. 6.3.8  Current Synthesizer
      9. 6.3.9  Programmable Peak Current Limit
      10. 6.3.10 Linear Multiplier and Quantized Voltage Feed Forward
      11. 6.3.11 Enhanced Transient Response (VA Slew-Rate Correction)
      12. 6.3.12 Voltage Biasing (VCC and VVREF)
      13. 6.3.13 PFC Enable and Disable
      14. 6.3.14 Adaptive Soft Start
      15. 6.3.15 PFC Start-Up Hold Off
      16. 6.3.16 Output Overvoltage Protection (OVP)
      17. 6.3.17 Zero-Power Detection
      18. 6.3.18 Thermal Shutdown
      19. 6.3.19 Current Loop Compensation
      20. 6.3.20 Voltage Loop Compensation
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Output Current Calculation
        2. 7.2.2.2 Bridge Rectifier
        3. 7.2.2.3 PFC Inductor (L1 and L2)
        4. 7.2.2.4 PFC MOSFETs (M1 and M2)
        5. 7.2.2.5 PFC Diode
        6. 7.2.2.6 PFC Output Capacitor
        7. 7.2.2.7 Current-Loop Feedback Configuration (Sizing of the Current-Transformer Turns-Ratio and Sense Resistor (RS))
        8. 7.2.2.8 Current-Sense Offset and PWM Ramp for Improved Noise Immunity
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Community Resources
    3. 8.3 Trademarks
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.2.2.4 PFC MOSFETs (M1 and M2)

The main specifications for the PFC MOSFETs are:

  • BVDSS, drain source breakdown voltage: ≥650V
  • RDS(on), ON-state drain source resistance: 520mΩ at 25 °C, estimate 1Ω at 125°C
  • COSS, output capacitance: 32pF at ~400V
  • tr, devise rise time: 12ns
  • tf, device fall time: 16ns

The losses in the device are calculated by Equation 45 and Equation 46. These calculations are approximations because the losses are dependent on parameters which are not well controlled. For example, the RDS(on) of a MOSFET may increase by a factor of 2 from 25°C to 125°C. Therefore several iterations may be needed to choose an optimum device for an application different than the one discussed here.

Each phase carries half the load power so the conduction losses are estimated by:

Equation 45. GUID-1DC9BCFA-1A03-4C6B-BAA4-52C72349A218-low.gif

The switching losses in each MOSFET are estimated by:

Equation 46. GUID-B765B317-DBBE-47A1-8C3F-0C35E8E92E3C-low.gif

The total losses in each MOSFET are then:

Equation 47. GUID-E8DA56BE-B802-491A-9287-A71718D28E4B-low.gif