SGLS245E May   2020  – May 2020 UCC2813-0-Q1 , UCC2813-1-Q1 , UCC2813-2-Q1 , UCC2813-3-Q1 , UCC2813-4-Q1 , UCC2813-5-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Block Diagram
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Detailed Pin Descriptions
        1. 8.3.1.1 COMP
        2. 8.3.1.2 CS
        3. 8.3.1.3 FB
        4. 8.3.1.4 GND
        5. 8.3.1.5 OUT
        6. 8.3.1.6 RC
        7. 8.3.1.7 REF
        8. 8.3.1.8 VCC
      2. 8.3.2  Undervoltage Lockout (UVLO)
      3. 8.3.3  Self-Biasing, Active Low Output
      4. 8.3.4  Reference Voltage
      5. 8.3.5  Oscillator
      6. 8.3.6  Synchronization
      7. 8.3.7  PWM Generator
      8. 8.3.8  Minimum Off-Time Adjustment (Dead-Time Control)
      9. 8.3.9  Leading Edge Blanking
      10. 8.3.10 Minimum Pulse Width
      11. 8.3.11 Current Limiting
      12. 8.3.12 Overcurrent Protection and Full-Cycle Restart
      13. 8.3.13 Soft Start
      14. 8.3.14 Slope Compensation
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Operation
      2. 8.4.2 UVLO Mode
      3. 8.4.3 Soft-Start Mode
      4. 8.4.4 Fault Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1  Bulk Capacitor Calculation
        2. 9.2.2.2  Transformer Design
        3. 9.2.2.3  MOSFET and Output Diode Selection
        4. 9.2.2.4  Output Capacitor Calculation
        5. 9.2.2.5  Current Sensing Network
        6. 9.2.2.6  Gate Drive Resistor
        7. 9.2.2.7  REF Bypass Capacitor
        8. 9.2.2.8  RT and CT
        9. 9.2.2.9  Start-Up Circuit
        10. 9.2.2.10 Voltage Feedback Compensation Procedure
          1. 9.2.2.10.1 Power Stage Gain, Zeroes, and Poles
          2. 9.2.2.10.2 Compensating the Loop
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Related Links
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 Community Resources
    5. 12.5 Trademarks
    6. 12.6 Electrostatic Discharge Caution
    7. 12.7 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
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発注情報

8.3.7 PWM Generator

Maximum duty cycle is higher for these devices than for their UC384x predecessors. This is primarily due to the higher ratio of timing capacitor discharge-to-charge current, which can exceed one hundred-to-one in a typical BiCMOS application. Attempts to program the oscillator maximum duty cycle much below the specified range, by adjusting the timing component values of RT and CT, must be avoided. There are two reasons to refrain from this design practice. First, the device's high discharge current would necessitate higher charging current than necessary for programming, defeating the purpose of low power operation. Second, a low-value timing resistor may prevent the capacitor from discharging to the lower threshold and initiating the next switching cycle.