SLUSB41A July   2012  – December 2014 UCC28700 , UCC28701 , UCC28702 , UCC28703

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Detailed Pin Description
        1. 8.3.1.1 VDD (Device Bias Voltage Supply)
        2. 8.3.1.2 GND (Ground)
        3. 8.3.1.3 VS (Voltage-Sense)
        4. 8.3.1.4 DRV (Gate Drive)
        5. 8.3.1.5 CS (Current Sense)
        6. 8.3.1.6 CBC (Cable Compensation), Pin 1 UCC28700
        7. 8.3.1.7 NTC (NTC Thermistor Shut-down), Pin 1 UCC28701/2/3
      2. 8.3.2 Fault Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Primary-Side Voltage Regulation
      2. 8.4.2 Primary-Side Current Regulation
      3. 8.4.3 Valley-Switching
      4. 8.4.4 Start-Up Operation
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Transformer Parameter Verification
        2. 9.2.2.2 Output Capacitance
        3. 9.2.2.3 VDD Capacitance, CDD
        4. 9.2.2.4 VDD Start-Up Resistance, RSTR
        5. 9.2.2.5 VS Resistor Divider, Line Compensation, and Cable Compensation
        6. 9.2.2.6 Input Bulk Capacitance and Minimum Bulk Voltage
        7. 9.2.2.7 Transformer Turns Ratio, Inductance, Primary-Peak Current
        8. 9.2.2.8 Standby Power Estimate
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
        1. 12.1.1.1  Capacitance Terms in Farads
        2. 12.1.1.2  Duty Cycle Terms
        3. 12.1.1.3  Frequency Terms in Hertz
        4. 12.1.1.4  Current Terms in Amperes
        5. 12.1.1.5  Current and Voltage Scaling Terms
        6. 12.1.1.6  Transformer Terms
        7. 12.1.1.7  Power Terms in Watts
        8. 12.1.1.8  Resistance Terms in Ω
        9. 12.1.1.9  Timing Terms in Seconds
        10. 12.1.1.10 Voltage Terms in Volts
        11. 12.1.1.11 AC Voltage Terms in VRMS
        12. 12.1.1.12 Efficiency Terms
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
      2. 12.2.2 Related Links
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ

7 Specifications

7.1 Absolute Maximum Ratings(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Bias supply voltage VVDD 38 V
Continuous gate current sink IDRV 50 mA
Continuous gate current source IDRV Self-limiting
Peak VS pin current IVS −1.2
Gate-drive voltage at DRV VDRV −0.5 Self-limiting V
Voltage range VS −0.75 7
CS, CBC (UCC28700),
NTC (UCC28701/2/3)		 −0.5 5
Operating junction temperature range TJ −55 150 °C
Lead temperature 0.6 mm from case for 10 seconds 260
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal. These ratings apply over the operating ambient temperature ranges unless otherwise noted.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VDD Bias supply operating voltage 9 35 V
CVDD VDD bypass capacitor 0.047 1 µF
RCBC Cable-compensation resistance 10 kΩ
IVS VS pin current −1 mA
TJ Operating junction temperature −20 125 °C

7.4 Thermal Information

THERMAL METRIC(1) UCC2870x UNIT
DBV
6 PINS
θJA Junction-to-ambient thermal resistance(2) 180 °C/W
θJCtop Junction-to-case (top) thermal resistance(3) 71.2
θJB Junction-to-board thermal resistance(4) 44.4
ψJT Junction-to-top characterization parameter(5) 5.1
ψJB Junction-to-board characterization parameter(6) 43.8
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a.
(3) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8.
(5) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining RθJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining RθJA, using a procedure described in JESD51-2a (sections 6 and 7).

7.5 Electrical Characteristics

over operating free-air temperature range, VDD = 25 V, RCBC = RNTC = open, –20°C ≤ TA ≤ 125°C, TJ = TA
(unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNITS
BIAS SUPPLY INPUT
IRUN Supply current, run IDRV = 0, run state 2.1 2.65 mA
IWAIT Supply current, wait IDRV = 0, wait state 85 110 µA
ISTART Supply current, start IDRV = 0, VVDD = 18 V, start state 1 1.5
IFAULT Supply current, fault IDRV = 0, fault state 2.1 2.8 mA
UNDER-VOLTAGE LOCKOUT
VVDD(on) VDD turn-on threshold VVDD low to high 19 21 23 V
VVDD(off) VDD turn-off threshold VVDD high to low 7.7 8.1 8.45
VS INPUT
VVSR Regulating level Measured at no-load condition, TJ = 25°C 4.01 4.05 4.09 V
VVSNC Negative clamp level IVS = -300 µA, volts below ground 190 250 325 mV
IVSB Input bias current VVS = 4 V –0.25 0 0.25 µA
CS INPUT
VCST(max) Max CS threshold voltage VVS = 3.7 V(1) 715 750 775 mV
VCST(min) Min CS threshold voltage VVS = 4.35 V(1) 230 250 270
KAM AM control ratio VCST(max) / VCST(min) 2.75 3.0 3.15 V/V
VCCR constant-current regulating level CC regulation constant 310 319 329 mV
KLC Line compensating current ratio IVSLS = -300 µA, IVSLS / current out of CS pin 23 25 28 A/A
TCSLEB Leading-edge blanking time DRV output duration, VCS = 1 V 195 235 275 ns
DRV
IDRS DRV source current VDRV = 8 V, VVDD = 9 V 20 25 mA
RDRVLS DRV low-side drive resistance IDRV = 10 mA 6 12 Ω
VDRCL DRV clamp voltage VVDD = 35 V 14 16 V
RDRVSS DRV pull-down in start state 150 200 230 kΩ
PROTECTION
VOVP Over-voltage threshold At VS input, TJ = 25°C 4.52 4.6 4.68 V
VOCP Over-current threshold At CS input 1.4 1.5 1.6
IVSL(run) VS line-sense run current Current out of VS pin – increasing 190 220 260 µA
IVSL(stop) VS line-sense stop current Current out of VS pin – decreasing 70 80 95
KVSL VS line-sense ratio IVSL(run) / IVSL(stop) 2.5 2.8 3.05 A/A
TJ(stop) Thermal shut-down temperature Internal junction temperature 165 °C
CABLE COMPENSATION (UCC28700 ONLY)
VCBC(max) Cable compensation maximum voltage Voltage at CBC at full load 2.8 3.0 3.4 V
VCVS(min) Compensation at VS VCBC = open, change in VS regulating level at full load –45 –15 25 mV
VCVS(max) Maximum compensation at VS VCBC = 0 V, change in VS regulating level at full load 275 320 365
CABLE COMPENSATION (UCC28701, UCC28702, AND UCC28703 ONLY)
VCVS Compensation at VS (UCC28701) Change in VS regulating level at full load –45 –15 25 mV
VCVS Compensation at VS (UCC28702) Change in VS regulating level at full load 100
VCVS Compensation at VS (UCC28703) Change in VS regulating level at full load 200
NTC INPUT (UCC28701, UCC28702, AND UCC28703 ONLY)
VNTCTH NTC shut-down threshold Fault UVLO cycle when below this threshold 0.95 V
INTC NTC pull-up current Current out of pin 105 µA
(1) These devices automatically vary the control frequency and current sense thresholds to improve EMI performance, these threshold voltages and frequency limits represent average levels.

7.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
fSW(max) Maximum switching frequency VVS = 3.7 V(1) 120 130 140 kHz
fSW(min) Minimum switching frequency VVS = 4.35 V(1) 875 1000 1100 Hz
TZTO Zero-crossing timeout delay 1.8 2.1 2.45 µs

7.7 Typical Characteristics

At VDD = 25 V, unless otherwise noted.
SLUSB41_Figure 1.pngFigure 1. Bias Supply Current vs. Bias Supply Voltage
SLUSB41_Figure 3.pngFigure 3. VS Regulation Voltage vs. Temperature
SLUSB41_Figure 5.pngFigure 5. Minimum CS Threshold Voltage vs. Temperature
SLUSB41_Figure 7.png
Figure 7. Minimum Switching Frequency vs. Temperature
SLUSB41_Figure 9.pngFigure 9. NTC Shutdown Threshold Voltage vs. Temperature
SLUSB41_Figure 11.pngFigure 11. Overvoltage Threshold vs. Temperature
SLUSB41_Figure 2.pngFigure 2. Bias Supply Current vs. Temperature
SLUSB41_Figure 4.pngFigure 4. Line-Sense Current vs. Temperature
SLUSB41_Figure 6.pngFigure 6. Constant-Current Regulating Level vs. Temperature
SLUSB41_Figure12.gif
VDRV = 8 V, VVDD = 9 V
Figure 8. DRV Source Current vs. Temperature
SLUSB41_Figure 10.pngFigure 10. NTC Pullup Current vs. Temperature