SLUSDV5B October 2019 – April 2020 UCC5304
PRODUCTION DATA.
The UCC5304 output stage features a pull-up structure which delivers the highest peak-source current when it is most needed — during the Miller plateau region of the power-switch turn on transition (when the power switch drain or collector voltage experiences dV/dt). The output stage pull-up structure features a P-channel MOSFET and an additional Pull-Up N-channel MOSFET in parallel. The function of the N-channel MOSFET is to provide a boost in the peak-sourcing current, enabling fast turn on. This is accomplished by briefly turning on the N-channel MOSFET during a narrow instant when the output is changing states from low to high. The on-resistance of this N-channel MOSFET (RNMOS) is approximately 1.47 Ω when activated.
The ROH parameter is a DC measurement and it is representative of the on-resistance of the P-channel device only. This is because the Pull-Up N-channel device is held in the off state in DC condition and is turned on only for a brief instant when the output is changing states from low to high. Therefore the effective resistance of the UCC5304 pull-up stage during this brief turn-on phase is much lower than what is represented by the ROH parameter.
The pull-down structure of the UCC5304 is comprised of an N-channel MOSFET. The ROL parameter, which is also a DC measurement, is representative of the impedance of the pull-down state in the device. The output of the UCC5304 is capable of delivering 4-A peak source and 6-A peak sink current pulses. The output voltage swings between VDD and VSS provides rail-to-rail operation, thanks to the MOS-out stage which delivers very low drop-out.