SLVSCS1B March   2015  – May 2015 UCD7138

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplified Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Body-Diode Conduction Detection
      2. 8.3.2 Gate Turnon and Turnoff
      3. 8.3.3 VCC and Undervoltage Lockout
      4. 8.3.4 Operating Supply Current
      5. 8.3.5 Driver Stage
    4. 8.4 Device Functional Modes
      1. 8.4.1 UVLO Mode
      2. 8.4.2 Normal Operation Mode
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Half-Bridge LLC
        1. 9.2.1.1 Design Requirements
          1. 9.2.1.1.1 Gate Input
          2. 9.2.1.1.2 Gate Output
          3. 9.2.1.1.3 Drain-to-Source Voltage Sensing
          4. 9.2.1.1.4 DTC Output
          5. 9.2.1.1.5 Turn-on Edge Optimization
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Design Without SR-Control Optimization
          2. 9.2.1.2.2 Setting the DTC Detection Window
          3. 9.2.1.2.3 Setting the Clamps
          4. 9.2.1.2.4 Setting the DTC Optimization Target and Hysteresis
          5. 9.2.1.2.5 Setting the DTC Negative Current Fault Protection
        3. 9.2.1.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Community Resource
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) (1)
MIN MAX UNIT
Input voltage VCC –0.3 20 V
IN, CRTL –0.3 3.8
VD –1 45
Maximum VCC continuous input current DC current 50 mA
Output current, peak (pulse) 6 A
Switching frequency, ƒS 2000 kHz
Operating junction temperature, TJ –40 125 °C
Lead temperature, soldering, 10 s, T(SOL) 300 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS–001, all pins(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VCC VCC input voltage from a low impedance source 4.5 18 V
VIN Input voltage 0 3.6 V
C(BP) VCC bypass capacitor 1 µF
TJ Operating junction temperature –40 125 °C

7.4 Thermal Information

THERMAL METRIC(1) UCD7138 UNIT
DRS (WSON)
6 PINS
RθJA Junction-to-ambient thermal resistance 73.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 84.2
RθJB Junction-to-board thermal resistance 46.3
ψJT Junction-to-top characterization parameter 2.6
ψJB Junction-to-board characterization parameter 46.4
RθJC(bot) Junction-to-case (bottom) thermal resistance 12.4
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

At VCC = 12 VDC, –40°C < TJ = TA < 125°C, 1µF capacitor from VCC to GND, all voltages are with respect to ground and currents are positive into and negative out of the specified terminal, unless otherwise noted. Typical values are at TJ = 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VCC BIAS SUPPLY
ICC(UV) VCC current, undervoltage VCC = 3.4 V 122 186 µA
ICC(ON) VCC current, no switching VCC = 12 V 0.85 1.1 mA
ICC(OPERATE) VCC current, normal operation (1) VCC = 12 V, C(LOAD) = 10 nF,
ƒ = 100 kHz		 13 17 mA
GATE INPUT (IN)
VIH Input signal high threshold 1.93 2.03 2.10 V
VIL Input signal low threshold 0.98 1.03 1.08 V
VI(hys) Input hysteresis 0.90 1.00 V
DTC OUTPUT
VOL(DTC) Low level output voltage 0.25 V
VOH(DTC) High level output voltage 2.5 V
IOH(DTC) Output sinking current 4 mA
IOL(DTC) Output sourcing current –4 mA
VDTC Maximum DTC pin output voltage 3.5 3.6 V
UNDERVOLTAGE LOCKOUT SECTION (UVLO)
VCC(ON) VCC turnon threshold 3.30 3.80 4.30 V
VCC(OFF) VCC turnoff threshold 3.10 3.56 4.02 V
VCC(hys) UVLO hysteresis VCC(hys) = VCC(ON) – VCC(OFF) 0.24 V
COMPARATOR
VTH Body diode conduction sensing threshold –179 –147 –113 mV
CI(VD–ground) Differential input capacitance between VD and ground (1) VD = –150 mV 20 pF
GATE DRIVER
VCC-VOH Output high voltage IOUT = –10 mA 0.038 0.064 V
VOL Output low voltage IOUT = 10 mA 0.0025 0.009 V
R(UP) Pullup resistance TA = 25°C, IOUT = –25 mA to
–50 mA		 5 6.1 Ω
TA = –40°C to 125°C,
IOUT = –50 mA		 5 6.3 Ω
R(DOWN) Pulldown resistance TA = 25°C, IOUT = 25 mA to
50 mA		 0.31 0.44 Ω
TA = –40°C to 125°C,
IOUT = 50 mA		 0.33 0.45 Ω
IO(source) Output peak current (source) (1) C(LOAD) = 0.22 µF, ƒS = 1 kHz,
5-V output		 –4 A
IO(sink) Output peak current (sink) (1) C(LOAD) = 0.22 µF, ƒS = 1 kHz,
5-V output		 6 A
(1) Ensured by Design, not tested in Production.

7.6 Switching Characteristics

At VCC = 12 VDC, –40°C < TJ = TA < 125°C, 1µF capacitor from VCC to GND, all voltages are with respect to ground and currents are positive into and negative out of the specified terminal, unless otherwise noted. Typical values are at TJ = 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tr Rise time C(LOAD) =1 nF, VCC = 5 V,
See Figure 1 and Figure 24		 5 8 ns
C(LOAD) =1 nF, VCC = 12 V,
See Figure 1 and Figure 24		 4 8 ns
tf Fall time C(LOAD)=1 nF, VCC = 5 V,
See Figure 1 and Figure 24		 3.36 5 ns
C(LOAD)=1 nF, VCC = 12 V,
See Figure 1 and Figure 24		 3.5 5 ns
tw(VD) Minimum VD pulse duration (width) that changes the DTC output state VCC = 5 V 10 23 ns
VCC = 12 V 10 23 ns
tw(IN) Minimum IN duration (width) that changes OUT state VCC = 5 V 11 13 ns
VCC = 12 V 11 13 ns
td(1) Gate driver turn on propagation delay C(LOAD) = 1 nF, VIN = 0 V to 3.3 V, VCC = 5 V,
VVD = –0.5 V, See Figure 1 and Figure 24		 14 26.6 ns
C(LOAD) = 1 nF, VIN = 0 V to 3.3 V, VCC = 12 V,
VVD = –0.5 V, See Figure 1 and Figure 24		 14 25 ns
td(2) Gate driver turn off propagation delay C(LOAD) = 1 nF, VIN = 3.3 V to 0 V, VCC = 5 V,
See Figure 1 and Figure 24		 14 22.9 ns
C(LOAD) = 1 nF, VIN = 3.3 V to 0 V, VCC = 12 V,
See Figure 1 and Figure 24		 14 22 ns
td(COMP) Body-diode conduction detection-comparator controlled-turnon propagation delay(1) C(LOAD) = 1 nF, VIN = 3.3 V, VCC = 5 V, VVD = 2 V to –0.5 V, See Figure 24 28 36 ns
C(LOAD) = 1 nF, VIN = 3.3 V, VCC = 12 V, VVD = 2 V to –0.5 V, See Figure 24 26 33 ns
td(DTC) DTC output propagation delay VCC = 5 V 21 27 ns
VCC = 12 V 18 25 ns
(1) For details about the operation, see the Gate Turnon and Turnoff section.
UCD7138 td_input_driver_slvscs1.gifFigure 1. Input Driver Operation

7.7 Typical Characteristics

UCD7138 D023_slvscs1.gif
VCC = 3.4 V
Figure 2. Start-Up Current (ICC(UV)) vs Temperature
UCD7138 D003_slvscs1.gif
VCC = 12 V C(LOAD) = 10 nF ƒ = 100 kHz
Figure 4. Operating Supply current (ICC(OPERATE)) vs Temperature
UCD7138 D005_slvscs1.gif
Figure 6. UVLO On-Voltage (VCC(ON))vs Temperature
UCD7138 D007_slvscs1.gif
Figure 8. Gate-Driver Pullup Resistance (R(UP)) vs Temperature
UCD7138 D009_slvscs1.gif
Figure 10. Gate-Drive Output Rise Time (tr) vs Temperature
UCD7138 D011_slvscs1.gif
Figure 12. Minimum VD Pulse Duration Which Changes the DTC Pin Output State (tw(VD)) vs Temperature
UCD7138 D013_slvscs1.gif
Figure 14. Gate Turnon Propagation Delay (td(1)) vs Temperature
UCD7138 D015_slvscs1.gif
Figure 16. Comparator-Controlled Turnon Delay for Body-Diode Conduction Detection (td(COMP)) vs Temperature
UCD7138 D017_slvscs1.gif
Figure 18. Gate Turnon Propagation Delay (td(1)) vs Supply Voltage (VCC)
UCD7138 D019_slvscs1.gif
Figure 20. Comparator-Controlled Turnon Delay for Body-Diode Conduction Detection (td(COMP)) vs Supply Voltage (VCC)
UCD7138 D021_slvscs1.gif
Figure 22. Gate-Drive Output Rise Time (tr) vs Supply Voltage (VCC)
UCD7138 D002_slvscs1.gif
No switching
Figure 3. Standby Current (ICC(ON))vs Temperature
UCD7138 D004_slvscs1.gif
VCC = 12 V
Figure 5. Body-Diode Conduction Sensing Threshold (VTH) vs Temperature
UCD7138 D006_slvscs1.gif
Figure 7. UVLO OFF-Voltage (VCC(OFF)) vs Temperature
UCD7138 D008_slvscs1.gif
Figure 9. Gate-Driver Pulldown Resistance (R(DOWN)) vs Temperature
UCD7138 D010_slvscs1.gif
Figure 11. Gate-Drive Output Rise Time (tf) vs Temperature
UCD7138 D012_slvscs1.gif
Figure 13. Minimum IN Pulse Duration Which Changes the Pin Output State (tw(IN)) vs Temperature
UCD7138 D014_slvscs1.gif
Figure 15. Gate Turnoff Propagation Delay (td(2)) vs Temperature
UCD7138 D016_slvscs1.gif
Figure 17. DTC Output Propagation Delay (td(DTC)) vs Temperature
UCD7138 D018_slvscs1.gif
Figure 19. Gate Turnoff Propagation Delay (td(2)) vs Supply Voltage (VCC)
UCD7138 D020_slvscs1.gif
Figure 21. DTC Output Propagation Delay (td(DTC)) vs Supply Voltage (VCC)
UCD7138 D022_slvscs1.gif
Figure 23. Gate-Drive Output Fall time (tf) vs Supply Voltage (VCC)