SLUS645F February   2005  – December 2014 UCD7201

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Description (Continued)
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Reference / External Bias Supply
      2. 8.3.2 Input Pin
      3. 8.3.3 Current Sensing and Protection
      4. 8.3.4 Handshaking
      5. 8.3.5 Driver Output
      6. 8.3.6 Source/Sink Capabilities During Miller Plateau
      7. 8.3.7 Drive Current and Power Requirements
      8. 8.3.8 Operational Waveforms
    4. 8.4 Device Functional Modes
      1. 8.4.1 Operation with VDD < 4.25 V (Minimum VDD)
      2. 8.4.2 Operation with IN Pin Open
      3. 8.4.3 Operation with ILIM Pin Open
      4. 8.4.4 Operation with ILIM Pin High
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Half-Bridge Converter
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Intermediate Bus Converter
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7 Specifications

7.1 Absolute Maximum Ratings(1)(2)

MIN MAX UNIT
VDD Supply Voltage 16 V
IDD Supply Current Quiescent 20 mA
Switching, TA = 25°C, , TJ = 125°C, VDD = 12 V 200
VOUT Output Gate Drive Voltage OUT –1 PVDD V
IOUT(sink) Output Gate Drive Current OUT 4.0 A
IOUT(source) –4.0
Analog Input ISET, CS –0.3 3.6 V
ILIM –0.3 3.6
Digital I/O’s IN, CLF –0.3 3.6
Power Dissipation TA = 25°C (PWP-14 package), TJ = 125°C 2.67 W
TJ Junction Operating Temperature UCD7201 –55 150 °C
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal.

7.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) 2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) 500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN TYP MAX UNIT
Supply Voltage, VDD 4.25 12 14.5 V
Supply bypass capacitance 1 μF
Reference bypass capacitance 0.22
Operating junction temperature –40 105 °C

7.4 Thermal Information

THERMAL METRIC(1) UCD7201 UNIT
PWP
14 PINS
RθJA Junction-to-ambient thermal resistance 50.7 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 31.8
RθJB Junction-to-board thermal resistance 27.8
ψJT Junction-to-top characterization parameter 1.2
ψJB Junction-to-board characterization parameter 27.6
RθJC(bot) Junction-to-case (bottom) thermal resistance 4.1
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

VDD = 12 V, 4.7-μF capacitor from VDD to GND, 0.22μF from 3V3 to AGND, TA = TJ = -40°C to 105°C, (unless otherwise noted).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY SECTION
Supply current, OFF VDD = 4.2 V - 200 400 μA
Supply current Outputs not switching IN = LOW - 1.5 2.5 mA
LOW VOLTAGE UNDERVOLTAGE LOCKOUT
VDD UVLO ON 4.25 4.5 4.75 V
VDD UVLO OFF 4.05 4.25 4.45
VDD UVLO hysteresis 150 250 350 mV
REFERENCE / EXTERNAL BIAS SUPPLY
3V3 initial set point TA = 25°C, ILOAD = 0 3.267 3.3 3.333 V
3V3 set point over temperature 3.234 3.3 3.366
3V3 load regulation ILOAD = 1 mA to 10 mA, VDD = 5 V - 1 6.6 mV
3V3 line regulation VDD = 4.75 V to 12 V, ILOAD = 10 mA - 1 6.6
Short circuit current VDD = 4.75 to 12 V 11 20 35 mA
3V3 OK threshold, ON 3.3 V rising 2.9 3.0 3.1 V
3V3 OK threshold, OFF 3.3 V falling 2.7 2.8 2.9
INPUT SIGNAL
HIGH, positive-going input threshold voltage (VIT+) 1.65 - 2.08 V
LOW negative-going input threshold voltage (VIT-) 1.16 - 1.5
Input voltage hysteresis, (VIT+ - VIT-) 0.6 - 0.8
Frequency - - 2 MHz
CURRENT LIMIT (ILIM)
ILIM internal current limit threshold ILIM = OPEN 0.51 0.55 0.58 V
ILIM maximum current limit threshold ILIM = 3.3 V 1.05 1.10 1.15
ILIM current limit threshold ILIM = 0.75 V 0.700 0.725 0.750
ILIM minimum current limit threshold ILIM = 0.25 V 0.21 0.23 0.25
CLF output high level CS > ILIM , ILOAD = -7 mA 2.64 - -
CLF output low level CS ≤ ILIM, ILOAD = 7 mA - - 0.66
Propagation delay from IN to CLF IN rising to CLF falling after a current limit event - 10 20 ns
CURRENT SENSE COMPARATOR
Bias voltage Includes CS comp offset 5 25 50 mV
Input bias current - –1 - μA
Propagation delay from CS to OUTx ILIM = 0.5 V, measured on OUTx, CS = threshold + 60 mV - 25 40 ns
Propagation delay from CS to CLF ILIM = 0.5 V, measured on CLF, CS = threshold + 60 mV - 25 50
CURRENT SENSE DISCHARGE TRANSISTOR
Discharge resistance IN = low, resistance from CS to AGND 10 35 75 Ω
OUTPUT DRIVERS
Source current VDD = 12 V, IN = high, OUTx = 5 V 4 A
Sink current VDD = 12 V, IN = low, OUTx = 5 V 4
Source current VDD = 4.75 V, IN = high, OUTx = 0 2
Sink current VDD = 4.75 V, IN = low, OUTx = 4.75 V 3
Rise time, tR CLOAD= 2.2 nF, VDD = 12 V 10 20 ns
Fall time, tF CLOAD = 2.2 nF, VDD = 12 V 10 15
Output with VDD < UVLO VDD =1.0 V, ISINK = 10 mA 0.8 1.2 V
Propagation delay from IN to OUT1, tD1 CLOAD = 2.2 nF, VDD = 12 V, CLK rising 20 35 ns
Propagation delay from IN to OUT2, tD2 CLOAD = 2.2 nF, VDD = 12 V, CLK falling 20 35
switch_lus645.gifFigure 1. Timing Diagram

7.6 Typical Characteristics

wave1_lus645.gifFigure 2. UVLO Thresholds vs Temperature
wave3_lus645.gifFigure 4. 3V3 Short Circuit Current vs Temperature
wave5_lus645.gifFigure 6. Supply Current vs Frequency (VDD = 8 V)
wave7_lus645.gifFigure 8. Supply Current vs Frequency (VDD = 12V)
wave9_lus645.gifFigure 10. Input Thresholds vs Temperature
wave11_lus645.gifFigure 12. Rise Time vs Supply Voltage
wave13_lus645.gifFigure 14. IN to OUTx Propagation Delay Rising vs Supply Voltage
wave15_lus645.gifFigure 16. Default Current Limit Threshold vs Temperature
wave17_lus645.gifFigure 18. CS to CLF Propagation Delay vs Temperature
wave19_lus645.gifFigure 20. Start-Up Behavior at VDD = 12 V (Input Tied to 3V3)
wave21_lus645.gifFigure 22. Start-Up Behavior at VDD = 12 V (Input Shortened to GND)
wave23_lus645.gifFigure 24. Output Rise and Fall Time (VDD = 12 V, CLOAD = 10 nF)
wave2_lus645.gifFigure 3. 3V3 Reference Voltage vs Temperature
wave4_lus645.gifFigure 5. Supply Current vs Frequency (VDD = 5 V)
wave6_lus645.gifFigure 7. Supply Current vs Frequency (VDD = 10 V)
wave8_lus645.gifFigure 9. Supply Current vs Frequency (VDD = 15 V)
wave10_lus645.gifFigure 11. Output Rise Time and Fall Time vs Temperature (VDD = 12 V)
wave12_lus645.gifFigure 13. Fall Time vs Supply Voltage
wave14_lus645.gifFigure 15. IN to OUTx Propagation Delay Falling vs Supply Voltage
wave16_lus645.gifFigure 17. CS to OUTx Propagation Delay vs Temperature
wave18_lus645.gifFigure 19. IN to OUT Propagation Delay vs Temperature
wave20_lus645.gifFigure 21. Shut Down Behavior at VDD = 12 V (Input Tied to 3V3)
wave22_lus645.gifFigure 23. Shut Down Behavior at VDD = 12 V (Input Shortened to GND)