CSD75208W1015 Dual 20-V Common Source P-Channel NexFET Power MOSFET
- SLPS512A July 2014 – May 2017 CSD75208W1015
  
  PRODUCTION DATA.

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DATA SHEET

CSD75208W1015 Dual 20-V Common Source P-Channel NexFET Power MOSFET

1 Features

Dual P-Channel MOSFETs
Common Source Configuration
Small Footprint 1 mm × 1.5 mm
Gate-Source Voltage Clamp
Gate ESD Protection –3 kV
Pb Free
RoHS Compliant
Halogen Free

2 Applications

Battery Management
Load Switch
Battery Protection

3 Description

This device is designed to deliver the lowest on-resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

Top View

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	–20		V
Q_g	Gate Charge Total (–4.5 V)	1.9		nC
Q_gd	Gate Charge Gate-to-Drain	0.23		nC
R_DS(on)	Drain-to-Source On-Resistance	V_GS= –1.8 V	100	mΩ
		V_GS = –2.5 V	70	mΩ
		V_GS = –4.5 V	56	mΩ
R_D1D2(on)	Drain-to-Drain On-Resistance	V_GS = –1.8 V	190	mΩ
		V_GS = –2.5 V	120	mΩ
		V_GS = –4.5 V	90	mΩ
V_GS(th)	Threshold Voltage	–0.8		V

Ordering Information⁽¹⁾

Device	Qty	Media	Package	Ship
CSD75208W1015	3000	7-Inch Reel	1.0 mm × 1.5 mm Wafer Level Package	Tape and Reel
CSD75208W1015T	250	7-Inch Reel	1.0 mm × 1.5 mm Wafer Level Package	Tape and Reel

For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	–20	V
V_GS	Gate-to-Source Voltage	–6	V
I_D1D2	Continuous Drain-to-Drain Current, T_C = 25°C	–1.6	A
I_D1D2	Pulsed Drain-to-Drain Current, T_C = 25°C⁽¹⁾	–22	A
I_S	Continuous Source Pin Current	–3	A
I_S	Pulsed Source Pin Current⁽¹⁾ ⁽²⁾	–39	A
I_G	Continuous Gate Clamp Current	–0.5	A
I_G	Pulsed Gate Clamp Current⁽¹⁾	–7	A
P_D	Power Dissipation	0.75	W
T_J, T_stg	Operating Junction and Storage Temperature Range	–55 to 150	°C

Max R_θJA = 165ºC/W, pulse duration ≤100 μs, duty cycle ≤1%
Both devices in parallel

R_D1D2(on) vs V_GS

CSD75208W1015 graph07_draintodrain_SLPS512.png

R_DS(on) vs V_GS

CSD75208W1015 graph07_draintosource_SLPS512.png

4 Revision History

Changes from * Revision (July 2014) to A Revision

Changed Figure 1. Go
Added Community Resources and Receiving Notification of Documentation Updates sections to Device and Documentation Support. Go

5 Specifications

5.1 Electrical Characteristics

T_A = 25°C unless otherwise stated

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_DS = –250 μA	–20			V
BV_GSS	Gate-to-Source Voltage	V_DS = 0 V, I_G = –250 μA	–6.1		–7.2	V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = –16 V			–1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = –6 V			–100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_DS = –250 μA	–0.5	–0.8	–1.1	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = –1.8 V, I_D = –1 A		100	150	mΩ
		V_GS = –2.5 V, I_D = –1 A		70	88	mΩ
		V_GS = –4.5 V, I_D = –1 A		56	68	mΩ
R_D1D2(on)	Drain-to-Drain On-Resistance	V_GS = –1.8 V, I_D1D2 = –1 A		190	285	mΩ
		V_GS = –2.5 V, I_D1D2 = –1 A		120	150	mΩ
		V_GS = –4.5 V, I_D1D2 = –1 A		90	108	mΩ
g_fs	Transconductance	V_DS = –2 V, I_D = –1 A		7.5		S
DYNAMIC CHARACTERISTICS
C_ISS	Input Capacitance	V_GS = 0 V, V_DS = –10 V, ƒ = 1 MHz		315	410	pF
C_OSS	Output Capacitance			132	172	pF
C_RSS	Reverse Transfer Capacitance			7.7	10	pF
Q_g	Gate Charge Total (–4.5 V)	V_DS = –10 V, I_DS = –1 A		1.9	2.5	nC
Q_gd	Gate Charge, Gate-to-Drain			0.23		nC
Q_gs	Gate Charge, Gate-to-Source			0.48		nC
Q_g(th)	Gate Charge at V_th			0.31		nC
Q_OSS	Output Charge	V_DS = –10 V, V_GS = 0 V		2.1		nC
t_d(on)	Turn On Delay Time	V_DS = –10 V, V_GS = –4.5 V, I_DS = –1 A, R_G = 0 Ω		9		ns
t_r	Rise Time			5		ns
t_d(off)	Turn Off Delay Time			29		ns
t_f	Fall Time			11		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_DS = –1 A, V_GS = 0 V		–0.75	–1	V
Q_rr	Reverse Recovery Charge	V_DD = –10 V, I_F = –1 A, di/dt = 200 A/μs		4.3		nC
t_rr	Reverse Recovery Time	V_DD = –10 V, I_F = –1 A, di/dt = 200 A/μs		9		ns

5.2 Thermal Information

T_A = 25°C unless otherwise stated

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJA	Junction-to-Ambient Thermal Resistance ⁽¹⁾ ⁽²⁾		165		°C/W
R_θJA	Junction-to-Ambient Thermal Resistance⁽²⁾ ⁽³⁾		95		°C/W

(1) Device mounted on FR4 material with minimum Cu mounting area

(2) Measured with both devices biased in a parallel condition.

(3) Device mounted on FR4 material with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu.

Typ R_θJA = 95°C/W when mounted on 1 inch² (6.45 cm²) of
2-oz. (0.071-mm thick) Cu.

Typ R_θJA = 165°C/W when mounted on minimum pad area of
2-oz. (0.071-mm thick) Cu.

5.3 Typical MOSFET Characteristics

(T_A = 25°C unless otherwise stated)

Figure 1. Transient Thermal Impedance

Figure 2. Saturation Characteristics

	I_D = –1 A	V_DS = –10 V

Figure 4. Gate Charge

	I_D = –250 µA

Figure 6. Threshold Voltage vs Temperature

Figure 8. On-State Drain-to-Source Resistance vs
Gate-to-Source Voltage

Figure 10. Typical Diode Forward Voltage

Figure 12. Maximum Drain Current vs Temperature

	V_DS = –5 V

Figure 3. Transfer Characteristics

Figure 5. Capacitance

Figure 7. On-State Drain-to-Drain Resistance vs
Gate-to-Source Voltage

	I_D = –1 A

Figure 9. Normalized On-State Resistance vs Temperature

Single Pulse, Max R_θJA = 165°C/W

Figure 11. Maximum Safe Operating Area