JAJS249E August   2006  – January 2024 TPS5410

PRODUCTION DATA  

  1.   1
  2. 特長
  3. アプリケーション
  4. 概要
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information 
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Oscillator Frequency
      2. 6.3.2  Voltage Reference
      3. 6.3.3  Enable (ENA) and Internal Slow-Start
      4. 6.3.4  Undervoltage Lockout (UVLO)
      5. 6.3.5  Boost Capacitor (BOOT)
      6. 6.3.6  Output Feedback (VSENSE)
      7. 6.3.7  Internal Compensation
      8. 6.3.8  Voltage Feed-Forward
      9. 6.3.9  Pulse-Width-Modulation (PWM) Control
      10. 6.3.10 Overcurrent Limiting
      11. 6.3.11 Overvoltage Protection
      12. 6.3.12 Thermal Shutdown
    4. 6.4 Device Functional Modes
      1. 6.4.1 Minimum Input Voltage
      2. 6.4.2 ENA Control
  8. Applications and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Application Circuit
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 Switching Frequency
          2. 7.2.1.2.2 Input Capacitors
          3. 7.2.1.2.3 Output Filter Components
            1. 7.2.1.2.3.1 Inductor Selection
            2. 7.2.1.2.3.2 Capacitor Selection
          4. 7.2.1.2.4 Output Voltage Setpoint
          5. 7.2.1.2.5 Boot Capacitor
          6. 7.2.1.2.6 Catch Diode
          7. 7.2.1.2.7 Advanced Information
            1. 7.2.1.2.7.1 Output Voltage Limitations
            2. 7.2.1.2.7.2 Internal Compensation Network
            3. 7.2.1.2.7.3 Thermal Calculations
        3. 7.2.1.3 Application Curves
      2. 7.2.2 Using All Ceramic Capacitors
        1. 7.2.2.1 Design Requirements
        2. 7.2.2.2 Detailed Design Procedure
          1. 7.2.2.2.1 Output Filter Capacitor Selection
          2. 7.2.2.2.2 External Compensation Network
        3. 7.2.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 ドキュメントの更新通知を受け取る方法
    3. 8.3 サポート・リソース
    4. 8.4 Trademarks
    5. 8.5 静電気放電に関する注意事項
    6. 8.6 用語集
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Electrical Characteristics

TJ = –40°C to +125°C, VIN = 5.5 V to 36 V. Typical values are at TJ = 25°C and VIN = 12 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE (VIN PIN)
IQ(VIN) VIN quiescent current           Non-switching, VSENSE = 2 V, PH pin open 2 4.4 mA
ISD(VIN) VIN shutdown supply current           
      
Shutdown, ENA = 0 V 15 50 µA
UVLO
VINUVLO(R) VIN UVLO rising threshold 
                
VVIN rising 5.3 5.5 V
VINUVLO(H) VIN UVLO hysteresis             0.35 V
VOLTAGE REFERENCE
VFB FB voltage TJ = 25°C  1.202 1.221 1.239 V
VFB FB voltage TJ = –40°C to 125°C 1.196 1.221 1.245 V
OSCILLATOR
fSW Switching frequency 400 500 600 kHz
tON(min) Minimum ON pulse width 150 200 ns
DMAX Maximum Duty Cycle fSW = 500kHz 85% 89%
ENABLE (ENA PIN)
VEN(R) ENA voltage rising threshold 1.3 V
VEN(F) ENA voltage falling threshold 0.5 V
VEN(H) ENA voltage hysteresis 325 mV
tSS Internal slow-start time (0~100%) 6.6 8 10 ms
OVERCURRENT PROTECTION
IHS(OC) High-side peak current limit 1.2 1.55 1.9 A
Hiccup time before re-start 13 16 20 ms
OUTPUT MOSFET
RDSON(HS) High-side MOSFET on-resistance VIN = 12 V, VBOOT-SW = 4.5 V 100 230
RDSON(HS) High-side MOSFET on-resistance VIN = 5.5 V, VBOOT-SW = 4.0 V 125
THERMAL SHUTDOWN
TJ(SD) Thermal shutdown threshold (1) Temperature rising 135 162 °C
TJ(HYS) Thermal shutdown hysteresis (1) 14 °C
Parameter specified by design, statistical analysis and production testing of correlated parameters. Not production tested.