TPS22975 5.7V、6A、16mΩオン抵抗負荷スイッチ
- JAJSCB5B May 2016 – September 2017 TPS22975
  
  PRODUCTION DATA.

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TPS22975 5.7V、6A、16mΩオン抵抗負荷スイッチ

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1 特長

シングル・チャネル負荷スイッチを内蔵
入力電圧範囲: 0.6V～V_BIAS
V_BIAS電圧範囲: 2.5V～5.7V
オン抵抗(R_ON)
- VIN = 0.6V～5.7V、V_BIAS = 5.7Vで
  R_ON = 16mΩ (標準値)
最大連続スイッチ電流: 6A
低い静止電流
- V_IN = V_BIAS = 5Vにおいて37µA (標準値)
制御入力スレッショルドが低いため、
1.2V、1.8V、2.5V、3.3Vロジックを使用可能
立ち上がり時間を構成可能
サーマル・シャットダウン
クイック出力放電(QOD) (オプション)
サーマル・パッドを搭載したSON 8ピン・パッケージ
JESD 22に従ってESD性能をテスト済み
- HBM 2000V、CDM 1000V

2 アプリケーション

Ultrabook™
ノートPCおよびネットブック
タブレットPC
コンシューマ・エレクトロニクス
セットトップ・ボックス、住居用ゲートウェイ
テレコム・システム
ソリッド・ステート・ドライブ(SSD)

3 概要

TPS22975製品ファミリは、TPS22975とTPS22975Nの2つのデバイスで構成されます。いずれのデバイスもシングル・チャネルの負荷スイッチで、立ち上がり時間を構成して突入電流を最小化できます。このデバイスにはNチャネルMOSFETが搭載され、0.6V～ 5.7Vの入力電圧範囲で動作し、最大で6Aの連続電流をサポートできます。スイッチはオン/オフ入力(ON)により制御され、低電圧の制御信号と直接接続が可能です。TPS22975には、スイッチがオフになったときにクイック出力放電を行うため、230Ωのオンチップ負荷抵抗をオプションで搭載できます。

TPS22975は小型で省スペースの2mm×2mm 8ピンのSONパッケージ(DSG)で供給され、大きな消費電力に対応できるようサーマル・パッドが搭載されています。このデバイスは、自由通気で-40℃～+105℃の温度範囲で動作するよう規定されています。

製品情報⁽¹⁾

型番	パッケージ	本体サイズ(公称)
TPS22975 TPS22975N	WSON (8)	2.00mm×2.00mm

利用可能なすべてのパッケージについては、このデータシートの末尾にある注文情報を参照してください。

概略回路図

TPS22975 application_circuit_02_SLVSDD0.gif

オン抵抗と入力電圧との関係

V_BIAS = 5V、I_VOUT = –200mA

4 改訂履歴

Changes from A Revision (June 2016) to B Revision

Updated V_IH in Recommended Operating ConditionsGo

Changes from * Revision (May 2016) to A Revision

デバイスのステータスを製品プレビューから量産データへ変更Go

5 Device Comparison Table

DEVICE	R_ON AT V_IN = V_BIAS = 5 V (TYPICAL)	QUICK-OUTPUT DISCHARGE	MAXIMUM OUTPUT CURRENT	ENABLE
TPS22975	16 mΩ	Yes	6 A	Active high
TPS22975N	16 mΩ	No	6 A	Active high

6 Pin Configuration and Functions

DSG Package

8-Pin (WSON)

Top View

DSG Package

8-Pin (WSON)

Bottom View

Pin Functions

PIN		I/O	DESCRIPTION
NO.	NAME	I/O	DESCRIPTION
1	VIN	I	Switch input. Input bypass capacitor recommended for minimizing V_IN dip. Must be connected to Pin 1 and Pin 2. See the Application and Implementation section for more information
2	VIN	I
3	ON	I	Active high switch control input. Do not leave floating
4	VBIAS	I	Bias voltage. Power supply to the device. Recommended voltage range for this pin is 2.5 V to 5.7 V. See the Application and Implementation section for more information
5	GND	—	Device ground
6	CT	O	Switch slew rate control. Can be left floating. See the Adjustable Rise Time section under Feature Description for more information
7	VOUT	O	Switch output
8	VOUT	O	Switch output
—	Thermal Pad	—	Thermal pad (exposed center pad) to alleviate thermal stress. Tie to GND. See the Layout Example section for layout guidelines

7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
V_IN	Input voltage	–0.3	6	V
V_OUT	Output voltage	–0.3	6	V
V_BIAS	Bias voltage	–0.3	6	V
V_ON	On voltage	–0.3	6	V
I_MAX	Maximum continuous switch current		6	A
I_PLS	Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle		8	A
T_J	Maximum junction temperature		125	°C
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

			MIN	MAX	UNIT
V_IN	Input voltage		0.6	V_BIAS	V
V_BIAS	Bias voltage		2.5	5.7	V
V_ON	ON voltage		0	5.7	V
V_OUT	Output voltage			V_IN	V
V_IH	High-level input voltage, ON	V_BIAS = 2.5 V to 5 V, T_A< 85°C	1.05	5.7	V
		V_BIAS = 2.5 V to 5 V, T_A< 105°C	1.1	5.7
		V_BIAS = 5 V to 5.7 V, T_A< 105°C	1.2	5.7
V_IL	Low-level input voltage, ON	V_BIAS = 2.5 V to 5.7 V	0	0.5	V
C_IN	Input capacitor		1⁽¹⁾		µF
T_A	Operating free-air temperature⁽¹⁾⁽²⁾		–40	105	°C

(1) See the Application Information section.

(2) In applications where high power dissipation and-or poor package thermal resistance is present, the maximum ambient temperature may have to be derated and device lifetime may be affected. Maximum ambient temperature (T_A(max)) is dependent on the maximum operating junction temperature (T_J(max)), the maximum power dissipation of the device in the application (P_D(max)), and the junction-to-ambient thermal resistance of the part-package in the application (θ_JA), and can be approximated by the following equation: T_A _(max) = T_J(max) – (θ_JA × P_D(max)).

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS22975	UNIT
		DSG (WSON)
		8 PINS
R_θJA	Junction-to-ambient thermal resistance	74.8	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	81	°C/W
R_θJB	Junction-to-board thermal resistance	44.7	°C/W
ψ_JT	Junction-to-top characterization parameter	3.9	°C/W
ψ_JB	Junction-to-board characterization parameter	45.1	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	16.4	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics—V_BIAS = 5 V

Unless otherwise noted, the specifications in the following table applies where V_BIAS = 5 V. Typical values are for T_A = 25 °C.

PARAMETER		TEST CONDITIONS		T_A	TYP	MAX	UNIT
POWER SUPPLIES AND CURRENTS
I_{Q, VBIAS}	V_BIASquiescent current	I_OUT = 0 A, V_IN = V_ON = 5 V		–40°C to +105°C	37	45	µA
I_{SD, VBIAS}	V_BIAS shutdown current	V_ON = V_OUT = 0 V		–40°C to +105°C		2.3	µA
I_{SD, VIN}	V_IN off-state supply current	V_ON = V_OUT = 0 V	V_IN = 5 V	–40°C to +85°C	0.005	5	µA
			V_IN = 5 V	–40°C to +105°C		10
			V_IN = 3.3 V	–40°C to +85°C	0.002	1.5
			V_IN = 3.3 V	–40°C to +105°C		3.5
			V_IN = 1.8 V	–40°C to +85°C	0.002	1
			V_IN = 1.8 V	–40°C to +105°C		2
			V_IN = 0.6 V	–40°C to +85°C	0.001	0.5
			V_IN = 0.6 V	–40°C to +105°C		1
I_ON	On-pin input leakage current	V_ON = 5.5 V		–40°C to +105°C		0.1	µA
RESISTANCE CHARACTERISTICS
R_ON	On-resistance	I_OUT = –200 mA	V_IN = 5 V	25°C	16	19	mΩ
				–40°C to +85°C		23
				–40°C to +105°C		25
			V_IN = 3.3 V	25°C	16	19
				–40°C to +85°C		23
				–40°C to +105°C		25
			V_IN = 1.8 V	25°C	16	19
				–40°C to +85°C		23
				–40°C to +105°C		25
			V_IN = 1.5 V	25°C	16	19
				–40°C to +85°C		23
				–40°C to +105°C		25
			V_IN = 1.05 V	25°C	16	19
				–40°C to +85°C		23
				–40°C to +105°C		25
			V_IN = 0.6 V	25°C	16	19
				–40°C to +85°C		23
				–40°C to +105°C		25
V_{ON, H}_YS	On-pin hysteresis	V_IN = 5 V		25°C	120		mV
R_PD ⁽¹⁾	Output pulldown resistance	V_IN = 5 V, V_ON = 0 V		–40°C to +105°C	230	300	Ω
T_SD	Thermal shutdown	Junction temperature rising			160		°C
T_{SD, HYS}	Thermal shutdown hysteresis	Junction temperature falling			20		°C

(1) TPS22975 only

7.6 Electrical Characteristics—V_BIAS = 2.5 V

Unless otherwise noted, the specifications in the following table applies where V_BIAS = 2.5 V. Typical values are for T_A = 25 °C.

PARAMETER		TEST CONDITIONS		T_A	TYP	MAX	UNIT
POWER SUPPLIES AND CURRENTS
I_{Q, VBIAS}	V_BIASquiescent current	I_OUT = 0 mA, V_IN = V_ON = 2.5 V		–40°C to +105°C	14	20	µA
I_{SD, VBIAS}	V_BIAS shutdown current	V_ON = V_OUT = 0 V		–40°C to +105°C		1	µA
I_{SD, VIN}	V_IN off-state supply current	V_ON = V_OUT = 0 V	V_IN = 2.5 V	–40°C to +85°C	0.005	1.3	µA
			V_IN = 2.5 V	–40°C to +105°C		2.6
			V_IN = 1.8 V	–40°C to +85°C	0.002	1
			V_IN = 1.8 V	–40°C to +105°C		2
			V_IN = 1.05 V	–40°C to +85°C	0.002	0.8
			V_IN = 1.05 V	–40°C to +105°C		1.5
			V_IN = 0.6 V	–40°C to +85°C	0.001	0.5
			V_IN = 0.6 V	–40°C to +105°C		1
I_ON	On-pin input leakage current	V_ON = 5.5 V		–40°C to +105°C		0.1	µA
RESISTANCE CHARACTERISTICS
R_ON	On-resistance	I_OUT = –200 mA	V_IN = 2.5 V	25°C	20	26	mΩ
				–40°C to +85°C		32
				–40°C to +105°C		34
			V_IN = 1.8 V	25°C	18	23
				–40°C to +85°C		29
				–40°C to +105°C		31
			V_IN = 1.5 V	25°C	18	22
				–40°C to +85°C		28
				–40°C to +105°C		30
			V_IN = 1.2 V	25°C	17	22
				–40°C to +85°C		27
				–40°C to +105°C		29
			V_IN = 0.6 V	25°C	17	21
				–40°C to +85°C		26
				–40°C to +105°C		27
V_{ON, HYS}	On-pin hysteresis	V_IN = 2.5 V		25°C	85		mV
R_PD⁽¹⁾	Output pulldown resistance	V_IN = 2.5 V, V_ON = 0 V		–40°C to +105°C	230	330	Ω
T_SD	Thermal shutdown	Junction temperature rising			160		°C
T_{SD, HYS}	Thermal shutdown hysteresis	Junction temperature falling			20		°C

(1) TPS22975 only

7.7 Switching Characteristics

PARAMETER		TEST CONDITION	TYP	UNIT
V_IN = V_BIAS = 5 V, T_A = 25ºC (unless otherwise noted)
t_ON	Turnon time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	1450	µs
t_OFF	Turnoff time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2
t_R	V_OUT rise time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	1750
t_F	V_OUT fall time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2
t_D	ON delay time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	600
V_IN = 0.6 V, V_BIAS = 5 V, T_A = 25ºC (unless otherwise noted)
t_ON	Turnon time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	620	µs
t_OFF	Turnoff time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2
t_R	V_OUT rise time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	280
t_F	V_OUT fall time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2
t_D	ON delay time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	485
V_IN = V_BIAS = 2.5 V, T_A = 25ºC (unless otherwise noted)
t_ON	Turnon time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2180	µs
t_OFF	Turnoff time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2
t_R	V_OUT rise time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2150
t_F	V_OUT fall time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2
t_D	ON delay time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	1120
V_IN = 0.6 V, V_BIAS = 2.5 V, T_A = 25ºC (unless otherwise noted)
t_ON	Turnon time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	1315	µs
t_OFF	Turnoff time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	3
t_R	V_OUT rise time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	650
t_F	V_OUT fall time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	2
t_D	ON delay time	R_L= 10 Ω, C_L = 0.1 µF, C_IN = 1 µF, C_T = 1000 pF, V_ON = 5 V	975

7.8 Typical DC Characteristics

V_IN = V_BIAS	V_ON = 5 V	V_OUT = 0 V

Figure 1. V_BIAS Quiescent Current vs Bias Voltage

V_IN = V_BIAS	V_ON = 0 V	V_OUT = 0 V

Figure 3. V_BIAS Shutdown Current vs Bias Voltage

V_BIAS = 5 V	I_OUT = –200 mA	V_ON = 5 V
Note:	All three R_ON curves have the same values; therefore, only one line is visible.

Figure 5. On-Resistance vs Ambient Temperature

V_BIAS = 5 V	I_OUT = –200 mA	V_ON = 5 V

Figure 7. On-Resistance vs Input Voltage

T_A = 25°C	I_OUT = –200 mA	V_ON = 5 V

Figure 9. On-Resistance vs Bias Voltage

V_BIAS = 5 V	V_ON = 5 V	V_OUT = 0 V

Figure 2. V_BIAS Quiescent Current vs Input Voltage

V_BIAS = 5 V	V_ON = 0 V	V_OUT = 0 V

Figure 4. V_IN Off-State Supply Current vs Input Voltage

V_BIAS = 2.5 V	I_OUT = –200 mA	V_ON = 5 V

Figure 6. On-Resistance vs Ambient Temperature

V_BIAS = 2.5 V	I_OUT = –200 mA	V_ON = 5 V

Figure 8. On-Resistance vs Input Voltage

V_IN = 2.5 V	V_ON = 0 V

Figure 10. Output Pull Down Resistance vs Bias Voltage

7.9 Typical AC Characteristics

T_A = 25°C, C_T = 1000 pF, C_IN = 1 µF, C_L = 0.1 µF, R_L = 10 Ω

V_BIAS = 2.5 V

Figure 11. Delay Time vs Input Voltage

V_BIAS = 2.5 V

Figure 13. Fall Time vs Input Voltage

V_BIAS = 2.5 V

Figure 15. Turnoff Time vs Input Voltage

V_BIAS = 2.5 V

Figure 17. Turnon Time vs Input Voltage

V_BIAS = 2.5 V

Figure 19. Rise Time vs Input Voltage

V_IN = 0.6 V	V_BIAS = 2.5 V

Figure 21. Turnon Response Time

V_IN = 2.5 V	V_BIAS = 2.5 V

Figure 23. Turnon Response Time

V_IN = 0.6 V	V_BIAS = 2.5 V

Figure 25. Turnoff Response Time

V_IN = 2.5 V	V_BIAS = 2.5 V

Figure 27. Turnoff Response Time

V_BIAS = 5 V

Figure 12. Delay Time vs Input Voltage

V_BIAS = 5 V

Figure 14. Fall Time vs Input Voltage

V_BIAS = 5 V

Figure 16. Turnoff Time vs Input Voltage

V_BIAS = 5 V

Figure 18. Turnon Time vs Input Voltage

V_BIAS = 5 V

Figure 20. Rise Time vs Input Voltage

V_IN = 0.6 V	V_BIAS = 5 V

Figure 22. Turnon Response Time

V_IN = 5 V	V_BIAS = 5 V

Figure 24. Turnon Response Time

V_IN = 0.6 V	V_BIAS = 5 V

Figure 26. Turnoff Response Time

V_IN = 5 V	V_BIAS = 5 V

Figure 28. Turnoff Response Time

8 Parameter Measurement Information

A. Rise and fall times of the control signal are 100 ns.

B. Turnoff times and fall times are dependent on the time constant at the load. For the TPS22975, the internal pull-down resistance R_PD is enabled when the switch is disabled. The time constant is (R_PD || R_L) × C_L.

Figure 29. Test Circuit

Figure 30. t_ON and t_OFF Waveforms

9 Detailed Description

9.1 Overview

The TPS22975 device is a single-channel, 6-A load switch in an 8-pin SON package. To reduce the voltage drop in high current rails, the device implements an N-channel MOSFET. The device has a configurable slew rate for applications that require a specific rise-time.

The device prevents downstream circuits from pulling high standby current from the supply by limiting the leakage current of the device when it is disabled. The integrated control logic, driver, power supply, and output discharge FET eliminates the need for any external components, which reduces solution size and bill of materials (BOM) count.

9.2 Functional Block Diagram

9.3 Feature Description

9.3.1 Adjustable Rise Time

A capacitor to GND on the CT pin sets the slew rate. The voltage on the CT pin can be as high as 15 V; therefore, the minimum voltage rating for the CT capacitor must be 30 V for optimal performance. An approximate formula for the relationship between C_T and slew rate when V_BIAS is set to 5 V is shown in Equation 1. This equation accounts for 10% to 90% measurement on V_OUT and does not apply for C_T < 100 pF. Use Table 1 to determine rise times for when C_T = 0 pF.

Equation 1. TPS22975 Equation1_SLVSDD0.gif

where

SR is the slew rate (in µs/V)
C_T is the capacitance value on the CT pin (in pF)
The units for the constant 26 are µs/V. The units for the constant 0.43 are µs/(V × pF).

Rise time can be calculated by multiplying the input voltage by the slew rate. Table 1 contains rise time values measured on a typical device. Rise times shown in Table 1 are only valid for the power-up sequence where V_IN and V_BIAS are already in steady state condition before the ON pin is asserted high.

Table 1. Rise Time t_R vs CT Capacitor

C_T (pF)	RISE TIME (µs) 10% - 90%, C_L = 0.1 µF, C_IN = 1 µF, R_L = 10 Ω, V_BIAS = 5 V⁽¹⁾
C_T (pF)	VIN = 5 V	VIN = 3.3 V	VIN = 1.8 V	VIN = 1.5 V	VIN = 1.2 V	VIN = 1.05 V	VIN = 0.6 V
0	140	105	75	65	60	55	40
220	520	360	215	185	160	140	95
470	970	660	385	330	275	240	155
1000	1750	1190	700	595	495	435	275
2200	3875	2615	1520	1290	1070	940	595
4700	7580	5110	2950	2510	2075	1830	1150
10000	16980	11485	6650	5635	4685	4110	2595

(1) Typical Values at 25°C with a 25-V X7R 10% Ceramic Capacitor on CT

9.3.2 Quick-Output Discharge (QOD) (Optional)

The TPS22975 includes an optional QOD feature. When the switch is disabled, an internal discharge resistance is connected between VOUT and GND to remove the remaining charge from the output. This resistance has a typical value of 230 Ω and prevents the output from floating while the switch is disabled. For best results, it is recommended that the device gets disabled before V_BIAS falls below the minimum recommended voltage.

9.3.3 Thermal Shutdown

Thermal shutdown protects the part from internally or externally generated excessive temperatures. When the device temperature triggers T_SD (typical 160°C), the switch is turned off. The switch automatically turns on again if the temperature of the die drops 20 degrees below the T_SD threshold.

9.4 Device Functional Modes

The Table 2 lists the VOUT pin states as determined by the ON pin.

Table 2. VOUT Connection

ON	TPS22975	TPS22975N
L	GND	Open
H	VIN	VIN