SN65DSI83-Q1 DSI-to-LVDSブリッジは、シングル・チャネルのMIPI D-PHYレシーバ・フロントエンド構成で、チャネルごとに4つのレーンがあり、それぞれ1Gbpsで動作し、最大入力帯域幅は4Gbpsです。このブリッジはMIPI DSI 18bpp RGB666および24bpp RGB888パケットをデコードし、フォーマットされたビデオ・データストリームを、25MHz~154MHzのピクセル・クロックで動作するLVDS出力に変換して、リンクごとに4つのデータ・レーンを持つシングル・リンクLVDSを提供します。
SN65DSI83-Q1デバイスは、最高でWUXGA 1920×1200、毎秒60フレーム、24bppを、低ブランキングでサポートします。SN65DSI83-Q1デバイスは、毎秒60フレームの1366×768/1280×800、18bppおよび24bppのアプリケーションにも適しています。DSIとLVDSのインターフェイス間のデータ・ストリーム・ミスマッチに適応するため、部分的なライン・バッファが実装されています。
SN65DSI83-Q1デバイスは、小型の外形の10mm×10mm、0.5mmピッチのHTQFPパッケージに搭載され、-40℃~+105℃の温度範囲で動作します。
型番 | パッケージ | 本体サイズ(公称) |
---|---|---|
SN65DSI83-Q1 | HTQFP (64) | 10.00mm×10.00mm |
Changes from * Revision (December 2016) to A Revision
PIN | TYPE | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
ADDR | 64 | I/O | Local I2C interface target address select. See Table 3. In normal operation this pin is an input. When the ADDR pin is programmed high, it must be tied to the same 1.8-V power rails where the SN65DSI83-Q1 VCC 1.8-V power rail is connected |
A_CLKP | 38 | O | LVDS channel A, LVDS clock output |
A_CLKN | 39 | ||
A_Y0P | 46 | O | LVDS channel A, LVDS data output 0 |
A_Y0N | 47 | ||
A_Y1P | 44 | O | LVDS channel A, LVDS data output 1 |
A_Y1N | 45 | ||
A_Y2P | 41 | O | LVDS channel A, LVDS data output 2 |
A_Y2N | 42 | ||
A_Y3P | 36 | O | LVDS channel A, LVDS data output 3. A_Y3P and A_Y3N must be left not connected (NC) for 18-bpp panels |
A_Y3N | 37 | ||
DA0P | 19 | I | MIPI D-PHY channel A, data lane 0; data rate up to 1 Gbps |
DA0N | 20 | ||
DA1P | 21 | I | MIPI D-PHY channel A, data lane 1; data rate up to 1 Gbps |
DA1N | 22 | ||
DA2P | 27 | I | MIPI D-PHY channel A, data lane 2; data rate up to 1 Gbps |
DA2N | 28 | ||
DA3P | 29 | I | MIPI D-PHY channel A, data lane 3; data rate up to 1 Gbps |
DA3N | 30 | ||
DACP | 24 | I | MIPI D-PHY channel A, clock lane; data rate up to 1 Gbps |
DACN | 25 | ||
EN | 2 | I | Chip enable and reset. The device is reset (shutdown) when the EN pin is low |
GND | 23, 26, 52 | G | Reference ground |
IRQ | 33 | O | Interrupt signal |
REFCLK | 17 | I | This pin is an optional external reference clock for the LVDS pixel clock. If an external reference clock is not used, this pin must be pulled to ground with an external resistor. The source of the reference clock must be placed as close as possible with a series resistor near the source to reduce EMI |
RSVD | 4 | RSVD | Reserved and leave them unconnected |
5 | |||
6 | |||
7 | |||
8 | |||
9 | |||
10 | |||
11 | |||
12 | |||
13 | |||
50 | |||
51 | |||
53 | |||
54 | |||
56 | |||
57 | |||
59 | |||
60 | |||
61 | |||
62 | |||
RSVD1 | 34 | I/O | Reserved. This pin must be left unconnected for normal operation |
RSVD2 | 1 | I | Reserved. This pin must be left unconnected for normal operation |
SCL | 15 | I | Local I2C interface clock |
SDA | 16 | I/O | Local I2C interface data |
VCC | 3 | — | 1.8-V power supply |
14 | |||
18 | |||
32 | |||
35 | |||
40 | |||
43 | |||
48 | |||
49 | |||
55 | |||
58 | |||
63 | |||
VCORE | 31 | P | 1.1-V output from the voltage regulator. This pin must have a 1-µF external capacitor to ground |
PowerPAD | — | — | Reference ground |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VCC | Supply voltage | –0.3 | 2.175 | V | |
Input voltage | CMOS input pins | –0.5 | 2.175 | V | |
DSI input pins (DAxP, DAxN) | –0.4 | 1.4 | V | ||
TA | Operating free-air temperature | –40 | 105 | °C | |
TJ | Junction temperature | –40 | 115 | °C | |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±4000 | V | |
Charged-device model (CDM), per AEC Q100-011 | ±1000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VCC | VCC power supply | 1.65 | 1.8 | 1.95 | V |
VPSN | Supply noise on any VCC pin | ƒ(noise) > 1 MHz | 0.05 | V | |
V(DSI) | DSI input pin voltage | –50 | 1350 | mV | |
ƒ(I2C) | Local I2C input frequency | 400 | kHz | ||
ƒHS(CLK) | DSI high-speed (HS) clock input frequency | 40 | 500 | MHz | |
tsu | DSI HS data to clock setup time; see Figure 1 | 0.15 | UI(1) | ||
th | DSI HS data to clock hold time; see Figure 1 | 0.15 | UI(1) | ||
ZOD(LVDS) | LVDS output differential impedance | 90 | 132 | Ω | |
TC | Case temperature | 92.2 | °C |
THERMAL METRIC(1) | SN65DSI83-Q1 | UNIT | |
---|---|---|---|
PAP (HTQFP) | |||
64 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 36.1 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 18.2 | °C/W |
RθJB | Junction-to-board thermal resistance | 20.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.8 | °C/W |
ψJB | Junction-to-board characterization parameter | 20.5 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 2.2 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | |
---|---|---|---|---|---|---|
VIL | Low-level control signal input voltage | 0.3 × VCC | V | |||
VIH | High-level control signal input voltage | 0.7 × VCC | V | |||
VOH | High-level output voltage | IOH = –4 mA | 1.25 | V | ||
VOL | Low-level output voltage | IOL = 4 mA | 0.4 | V | ||
ILKG | Input failsafe leakage current | VCC = 0; VCC(PIN) = 1.8 V | ±30 | μA | ||
IIH | High level input current | Any input terminal | ±30 | μA | ||
IIL | Low level input current | Any input terminal | ±30 | μA | ||
IOZ | High-impedance output current | CMOS output terminals | ±10 | μA | ||
IOS | Short-circuit output current | Any output driving GND short | ±50 | mA | ||
ICC | Device active current | See (2) | 77 | 124 | mA | |
IULPS | Device standby current | All data and clock lanes are in ultra-low power state (ULPS) | 7.7 | 14 | mA | |
IRST | Shutdown current | EN = 0 | 130 | µA | ||
REN | EN control input resistor | 200 | kΩ | |||
MIPI DSI INTERFACE | ||||||
VIH-LP | LP receiver input high threshold | See Figure 2 | 880 | mV | ||
VIL-LP | LP receiver input low threshold | See Figure 2 | 550 | mV | ||
|VID| | HS differential input voltage | 100 | 270 | mV | ||
|VIDT| | HS differential input voltage threshold | 50 | mV | |||
VIL-ULPS | LP receiver input low threshold; ultra-low power state (ULPS) | 300 | mV | |||
VCM-HS | HS common mode voltage; steady-state | 70 | 330 | mV | ||
ΔVCM-HS | HS common mode peak-to-peak variation including symbol delta and interference | 100 | mV | |||
VIH-HS | HS single-ended input high voltage | See Figure 2 | 460 | mV | ||
VIL-HS | HS single-ended input low voltage | See Figure 2 | –40 | mV | ||
VTERM-EN | HS termination enable; single-ended input voltage (both Dp AND Dn apply to enable) | Termination is switched simultaneous for Dn and Dp | 450 | mV | ||
RDIFF-HS | HS mode differential input impedance | 80 | 125 | Ω | ||
LVDS OUTPUT | ||||||
|VOD| | Steady-state differential output voltage
A_Y x P/N |
CSR 0×19.3:2=00
100 Ω near end termination |
180 | 245 | 330 | mV |
CSR 0×19.3:2=01
100 Ω near end termination |
215 | 293 | 392 | |||
CSR 0×19.3:2=10
100 Ω near end termination |
250 | 341 | 455 | |||
CSR 0×19.3:2=11
100 Ω near end termination |
290 | 389 | 515 | |||
CSR 0×19.3:2=00
200 Ω near end termination |
150 | 204 | 275 | |||
CSR 0×19.3:2=01
200 Ω near end termination |
200 | 271 | 365 | |||
CSR 0×19.3:2=10
200 Ω near end termination |
250 | 337 | 450 | |||
CSR 0×19.3:2=11
200 Ω near end termination |
300 | 402 | 535 | |||
|VOD| | Steady-state differential output voltage for
A_CLKP/N |
CSR 0×19.3:2=00
near end termination |
140 | 191 | 262 | mV |
CSR 0×19.3:2=01
100 Ω near end termination |
168 | 229 | 315 | |||
CSR 0×19.3:2=10
100 Ω near end termination |
195 | 266 | 365 | |||
CSR 0×19.3:2=11
100 Ω near end termination |
226 | 303 | 415 | |||
CSR 0×19.3:2=00
200 Ω near end termination |
117 | 159 | 220 | |||
CSR 0×19.3:2=01
200 Ω near end termination |
156 | 211 | 295 | |||
CSR 0×19.3:2=10
200 Ω near end termination |
195 | 263 | 362 | |||
CSR 0×19.3:2=11
200 Ω near end termination |
234 | 314 | 435 | |||
Δ|VOD| | Change in steady-state differential output voltage between opposite binary states | RL = 100 Ω | 35 | mV | ||
VOC(SS) | Steady state common-mode output voltage(3) | CSR 0×19.6 = 1 and CSR 0×1B.6 = 1 Figure 3 | 0.75 | 0.9 | 1.13 | V |
CSR 0×19.6 = 0 see Figure 3 | 1 | 1.25 | 1.5 | |||
VOC(PP) | Peak-to-peak common-mode output voltage | see Figure 3 | 35 | mV | ||
RLVDS_DIS | Pulldown resistance for disabled LVDS outputs | 1 | kΩ |
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | |
---|---|---|---|---|---|---|
DSI | ||||||
tGS | DSI LP glitch suppression pulse width | 300 | ps | |||
LVDS | ||||||
tc | Output clock period | 6.49 | 40 | ns | ||
tw | High-level output clock (CLK) pulse duration | 4/7 tc | ns | |||
t0 | Delay time, CLK↑ to 1st serial bit position | tc = 6.49 ns;
Input clock jitter < 25 ps (REFCLK) See Figure 4 |
–0.15 | 0.15 | ns | |
t1 | Delay time, CLK↑ to 2nd serial bit position | 1/7 tc – 0.15 | 1/7 tc + 0.15 | ns | ||
t2 | Delay time, CLK↑ to 3rd serial bit position | 2/7 tc – 0.15 | 2/7 tc + 0.15 | ns | ||
t3 | Delay time, CLK↑ to 4th serial bit position | 3/7 tc – 0.15 | 3/7 tc + 0.15 | ns | ||
t4 | Delay time, CLK↑ to 5th serial bit position | 4/7 tc – 0.15 | 4/7 tc + 0.15 | ns | ||
t5 | Delay time, CLK↑ to 6th serial bit position | 5/7 tc – 0.15 | 5/7 tc + 0.15 | ns | ||
t6 | Delay time, CLK↑ to 7th serial bit position | 6/7 tc – 0.15 | 6/7 tc + 0.15 | ns | ||
tr | Differential output rise time | See Figure 4 | 180 | 500 | ps | |
tf | Differential output fall time | |||||
EN, ULPS, RESET | ||||||
ten | Enable time from EN or ULPS | tc(o) = 12.9 ns | 1 | ms | ||
tdis | Disable time to standby; see | tc(o) = 12.9 ns | 0.1 | ms | ||
treset | Reset yime | 10 | ms | |||
REFCLK | ||||||
FREFCLK | REFCLK freqeuncy. Supported frequencies:
25 MHz - 154 MHz |
25 | 154 | MHz | ||
tr, tf | REFCLK rise and fall time | 100 × 10–12 | 1×10–9 | s | ||
tpj | REFCLK peak-to-peak phase jitter | 50 | ps | |||
Duty | REFCLK duty cycle | 40% | 50% | 60% | ||
REFCLK or DSI CLK (DACP/N) | ||||||
SSC_CLKIN | SSC enabled Input CLK center spread depth(2) | 0.5% | 1% | 2% | ||
Modulation frequency | 30 | 60 | kHz |