3 Revision History
Changes from Revision B (October 2018) to Revision C (September 2022)
- 文書全体にわたって表、図、相互参照の採番方法を更新Go
- Added description for reprogramming VIH and VIL thresholds and
changed VDDIO to VI2C (pin 25) Go
- Added description for reprogramming VIH and VIL thresholds (pins 1
and 2) Go
- Added I2C target Operation description updated from DS90UB954
datasheetGo
- Added Remote target Operation information/description copied over
from DS90UB954 data sheetGo
- Added section on Remote I2C targets Data Throughput copied from the
DS90UB954 data sheet.Go
- Added section on Remote Target Addressing copied over from DS90UB954
data sheet.Go
- Added broadcast write to remote target devices. Copied from
DS90UB954 data sheet.Go
- Added section for Code Example for Broadcast Write. Copied from
DS90UB954 data sheet.Go
- Added registers 0x3F to 0x43Go
- Changed I/O to VDDIO and added VDDIO to register 0x0D bits 7 and
6Go
- Added Indirect Access Registers Section Go
- Added Indirect Access Register MapGo
- Added FPD3 Channel 0 Registers tableGo
- Added FPD3 Channel 1 Registers tableGo
- Added FPD3 RX Shared Registers tableGo
- Added reset information below power up sequencing figure. Copied
from DS90UB914 data sheet.Go
Changes from Revision A (January 2017) to Revision B (October 2018)
- Added that unused GPIOs can be left open or floatingGo
- Added that PDB is internal pull down enabledGo
- Added description for selecting pull up resistor for OSS_SELGo
- Added description for selecting pull up resistor for OENGo
- Removed S, PD type for RES (pin 44)Go
- Removed S, PD type for RES (pin 43) and added it must be tied to GND. Go
- Added PDB test conditions for the LVCMOS IO voltage parameter in the Absolute Maximum Ratings table Go
- Changed typical LVCMOS low-to-high transition time value from: 2.5 ns to: 2 nsGo
- Changed maximum LVCMOS low-to-high transition time value from: 4 ns to: 3 nsGo
- Changed typical LVCMOS high-to-low transition time value from: 2.5 ns to: 2 ns Go
- Changed maximum LVCMOS high-to-low transition time value from: 4 ns to: 3 ns Go
- Changed receiver clock jitter test condition from: SSCG[3:0] = OFF to: SSCG[0] = OFFGo
- Changed deserializer period jitter test condition from: SSCG[3:0] = OFF to: SSCG[0] = OFFGo
- Changed deserializer cycle-to-cycle clock jitter test condition from: SSCG[3:0] = OFF to: SSCG[0] = OFFGo
- Changed input jitter symbol from: TOLJIT to: TIJIT
Go
- Added reference to compatibility with DS90UB953-Q1/935-Q1 serializers Go
- Added column for DS90UB953-Q1/935-Q1Go
- Added clarification on input mode selection Go
- Fixed typo in Figure 13 supply rail text Go
- Changed pullup power supply node from VDDIO to V(I2C)Go
- Removed pullup resistor recommendationGo
- Updated description of clock frequency during BIST operationGo
- Fixed typos in register mapsGo
- Updated register "TYPE" column per legend Go
- Fixed typo in register name.Go
- Added Power Over Coax section Go
- Updated return loss S11 values Go
- Added STP typical connection diagram Go
- Updated recommendation for common ground planeGo
- Updated recommendation for bypass capacitorsGo
- Updated typical bypass capacitor value from 50 uF to 47 uFGo
Changes from Revision * (September 2016) to Revision A (January 2017)
- 「製品プレビュー」から「量産データ」に変更Go
- Fixed broken link in Power Over Coax sectionGo