JAJSDC3A June   2017  – August 2018 UCC27712

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      概略回路図
      2.      標準的な伝播遅延の比較
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Dynamic Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 VDD and Under Voltage Lockout
      2. 8.3.2 Input and Output Logic Table
      3. 8.3.3 Input Stage
      4. 8.3.4 Output Stage
      5. 8.3.5 Level Shift
      6. 8.3.6 Low Propagation Delays and Tightly Matched Outputs
      7. 8.3.7 Parasitic Diode Structure
    4. 8.4 Device Functional Modes
      1. 8.4.1 Minimum Input Pulse Operation
      2. 8.4.2 Output Interlock and Dead Time
      3. 8.4.3 Operation Under 100% Duty Cycle Condition
      4. 8.4.4 Operation Under Negative HS Voltage Condition
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Selecting HI and LI Low Pass Filter Components (RHI, RLI, CHI, CLI)
        2. 9.2.2.2 Selecting Bootstrap Capacitor (CBOOT)
        3. 9.2.2.3 Selecting VDD Bypass/Holdup Capacitor (CVDD) and Rbias
        4. 9.2.2.4 Selecting Bootstrap Resistor (RBOOT)
        5. 9.2.2.5 Selecting Gate Resistor RON/ROFF
        6. 9.2.2.6 Selecting Bootstrap Diode
        7. 9.2.2.7 Estimate the UCC27712 Power Losses (PUCC27712)
        8. 9.2.2.8 Estimating Junction Temperature
        9. 9.2.2.9 Operation With IGBT's
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントのサポート
      1. 12.1.1 関連資料
    2. 12.2 関連リンク
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報

7.3 Recommended Operating Conditions

All voltages are with respect to COM, over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VDD Supply voltage IGBT applications 10 20 V
MOSFET applications 10 17
HB–HS Driver bootstrap voltage IGBT applications 10 20
MOSFET applications 10 17
HS Source terminal voltage(1) –11 600
HI, LI Input voltage with respect to COM –4 20
TA Ambient temperature –40 125 °C
(1) Logic operational for HS of –11 V to +600 V at HB–HS = 15 V