JAJSDC3A June   2017  – August 2018 UCC27712

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      概略回路図
      2.      標準的な伝播遅延の比較
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Dynamic Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 VDD and Under Voltage Lockout
      2. 8.3.2 Input and Output Logic Table
      3. 8.3.3 Input Stage
      4. 8.3.4 Output Stage
      5. 8.3.5 Level Shift
      6. 8.3.6 Low Propagation Delays and Tightly Matched Outputs
      7. 8.3.7 Parasitic Diode Structure
    4. 8.4 Device Functional Modes
      1. 8.4.1 Minimum Input Pulse Operation
      2. 8.4.2 Output Interlock and Dead Time
      3. 8.4.3 Operation Under 100% Duty Cycle Condition
      4. 8.4.4 Operation Under Negative HS Voltage Condition
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Selecting HI and LI Low Pass Filter Components (RHI, RLI, CHI, CLI)
        2. 9.2.2.2 Selecting Bootstrap Capacitor (CBOOT)
        3. 9.2.2.3 Selecting VDD Bypass/Holdup Capacitor (CVDD) and Rbias
        4. 9.2.2.4 Selecting Bootstrap Resistor (RBOOT)
        5. 9.2.2.5 Selecting Gate Resistor RON/ROFF
        6. 9.2.2.6 Selecting Bootstrap Diode
        7. 9.2.2.7 Estimate the UCC27712 Power Losses (PUCC27712)
        8. 9.2.2.8 Estimating Junction Temperature
        9. 9.2.2.9 Operation With IGBT's
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントのサポート
      1. 12.1.1 関連資料
    2. 12.2 関連リンク
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報

9.2.1 Design Requirements

Table 4 shows the reference design parameters for the example application: UCC27712 driving 650-V MOSFETs in a high side-low side configuration.

Table 4. UCC27712 Design Requirements

PARAMETER VALUE UNIT
Power transistor IPB65R190CFD -
VDD 12 V
Input signal amplitude 3.3 V
Switching frequency (fSW) 100 kHz
DC link voltage (VHV) 400 V