JAJSDX9C June   2017  – November 2018 TPS2373

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      概略回路図
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  APD Auxiliary Power Detect
      2. 7.3.2  PG Power Good (Converter Enable) Pin Interface
      3. 7.3.3  CLSA and CLSB Classification
      4. 7.3.4  DEN Detection and Enable
      5. 7.3.5  Internal Pass MOSFET
      6. 7.3.6  TPH, TPL and BT PSE Type Indicators
      7. 7.3.7  VC_IN, VC_OUT, UVLO_SEL, and Advanced PWM Startup
      8. 7.3.8  AMPS_CTL, MPS_DUTY and Automatic MPS
      9. 7.3.9  VDD Supply Voltage
      10. 7.3.10 VSS
      11. 7.3.11 Exposed Thermal PAD
    4. 7.4 Device Functional Modes
      1. 7.4.1  PoE Overview
      2. 7.4.2  Threshold Voltages
      3. 7.4.3  PoE Startup Sequence
      4. 7.4.4  Detection
      5. 7.4.5  Hardware Classification
      6. 7.4.6  Inrush and Startup
      7. 7.4.7  Maintain Power Signature
      8. 7.4.8  Advanced Startup and Converter Operation
      9. 7.4.9  PD Hotswap Operation
      10. 7.4.10 Startup and Power Management, PG and TPH, TPL, BT
      11. 7.4.11 Adapter ORing
      12. 7.4.12 Using DEN to Disable PoE
      13. 7.4.13 ORing Challenges
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Requirements
        1. 8.2.2.1  Input Bridges and Schottky Diodes
        2. 8.2.2.2  Protection, D1
        3. 8.2.2.3  Capacitor, C1
        4. 8.2.2.4  Detection Resistor, RDEN
        5. 8.2.2.5  Classification Resistors, RCLSA and RCLSB
        6. 8.2.2.6  APD Pin Divider Network RAPD1, RAPD2
        7. 8.2.2.7  Opto-isolators for TPH, TPL and BT
        8. 8.2.2.8  VC Input and Output, CVCIN and CVCOUT
        9. 8.2.2.9  UVLO Select, UVLO_SEL
        10. 8.2.2.10 Automatic MPS and MPS Duty Cycle, RMPS and RMPS_DUTY
        11. 8.2.2.11 Internal Voltage Reference, RREF
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 EMI Containment
    4. 10.4 Thermal Considerations and OTSD
    5. 10.5 ESD
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 ドキュメントのサポート
      1. 11.1.1 関連資料
    2. 11.2 ドキュメントの更新通知を受け取る方法
    3. 11.3 コミュニティ・リソース
    4. 11.4 商標
    5. 11.5 静電気放電に関する注意事項
    6. 11.6 Glossary
  12. 12メカニカル、パッケージ、および注文情報

6.5 Electrical Characteristics

Unless otherwise noted, 40 V ≤ VVDD ≤ 57 V; RDEN = 24.9 kΩ; PG, CLSA, CLSB, MPS_DUTY, AMPS_CTL, UVLO_SEL, VC_IN, TPH, TPL and BT open; APD connected to RTN; CVC_OUT = 1 µF; RREF = 49.9 kΩ; –40°C ≤ TJ ≤ 125°C. Positive currents are into pins. Typical values are at 25°C. All voltages are with respect to VVSS unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
DETECTION (DEN)
Bias current DEN open, VVDD = 10.1 V, Measure ISUPPLY(VDD, RTN, DEN), Not in mark 3 4.8 14 µA
DEN leakage current VDEN = VVDD = 57 V 0.5 5 µA
Detection current Measure ISUPPLY(VDD, RTN, DEN), VVDD = 1.4 V 53.8 56.5 58.3 µA
Measure ISUPPLY(VDD, RTN, DEN), VVDD = 10.1 V, Not in mark 395 410 417
VPD_DIS Disable threshold DEN falling 3 3.7 5 V
Hysteresis 75 150 250 mV
AUXILIARY POWER DETECTION (APD)
VAPDEN Voltage threshold VAPD rising, measure to VRTN 1.38 1.82 V
VAPDH Hysteresis, measure to VRTN 0.055 0.09 0.145
Pulldown resistance V(APD–RTN) = 5 V, measure RAPD 2.8 MΩ
CLASSIFICATION (CLS)
ICLS Classification A,B signature current 13 V ≤ VVDD ≤ 21 V, Measure IVDD + IDEN + IRTN
RCLSA or RCLSB = 1210 Ω 2.1 2.5 2.9 mA
RCLSA or RCLSB = 249 Ω 9.9 10.6 11.2
RCLSA or RCLSB = 140 Ω 17.6 18.6 19.4
RCLSA or RCLSB = 90.9 Ω 26.5 27.9 29.3
RCLSA or RCLSB = 63.4 Ω 38 39.9 42
VCL_ON Class lower threshold VVDD rising, ICLS ↑ 11.9 12.5 13 V
VCL_H Hysteresis 1.4 1.6 1.7
VCU_ON Class upper threshold VVDD rising, ICLS↓ 21 22 23 V
VCU_H Hysteresis 0.5 0.78 0.9
VMSR Mark reset threshold VVDD falling 3 3.9 5 V
Mark state resistance 2-point measurement at 5 V and 10.1 V 6 10 12 kΩ
Leakage current VVDD = 57 V, VCLS = 0 V, measure ICLS 1 µA
tLCF_PD Long first class event timing Class 1st event time duration for new MPS 76 81.5 86 ms
PASS DEVICE (RTN)
rDS(on) On resistance TPS2373-3 0.3 0.55 Ω
TPS2373-4 0.1 0.2
Input bias current VVDD = VRTN = 30 V, measure IRTN 50 µA
RTN leakage current VVDD = VRTN = 100 V, VDEN = VVSS , measure IRTN 80
Current limit VRTN = 1.5 V TPS2373-3 1.55 1.85 2.2 A
VRTN = 1.5 V TPS2373-4 1.9 2.2 2.5
Inrush current limit VRTN = 2 V,
VVDD: 20 V → 48 V		 TPS2373-3 165 200 237 mA
VRTN = 2 V,
VVDD: 20 V → 48 V		 TPS2373-4 275 335 395
Inrush termination Percentage of inrush current 65% 90% 99%
tINR_DEL Inrush delay 78 81.5 87 ms
Foldback threshold VRTN rising 12.5 14.5 15.5 V
Foldback deglitch time VRTN rising to when current limit changes to inrush current limit 1.35 1.65 1.95 ms
POWER GOOD (PG)
Output low voltage Measure VPG – VRTN, IPG = 2 mA, VRTN = 2 V, VDD: 20 V → 48 V 0.27 0.5 V
Leakage current VPG = 57 V, VRTN = 0 V 10 μA
VPG = 10 V, VRTN = 0 V 1
PSE TYPE INDICATION (TPL, TPH,BT)
VTPL Output low voltage ITPL = 2 mA, after 2-, 3- or 5-event classification, startup has completed,
VRTN = 0 V		 0.27 0.5 V
VTPH Output low voltage ITPH = 2 mA, after 4- or 5-event classification, startup has completed, VRTN = 0 V 0.27 0.5
VBT Output low voltage IBT = 2 mA, after IEEE802.3bt classification, startup has completed, VRTN = 0 V 0.27 0.5
Leakage current VTPL or VTPH or VBT = 7 V, VRTN = 0 V 1 µA
tTPLHBT TPL, TPH, BT delay From VC_IN high with PG open during startup to TPH and/or TPL and/or BT active 20 24 28 ms
UVLO
VUVLO_R UVLO rising threshold VVDD rising 36.3 38.1 40 V
VUVLO_F UVLO falling threshold VVDD falling 30.5 32 33.6
VUVLO_H UVLO hysteresis 6.1 V
BIAS CURRENT
Operating current 40 V ≤ VVDD ≤ 57 V, startup has completed 550 800 µA
STARTUP
VVCO_UV VC_OUT undervoltage falling threshold VVC_OUT-RTN falling 6.45 6.9 7.35 V
VVC_OUT-RTN falling, UVLO_SEL connected to RTN 3.45 3.9 4.25
VVCO_UV_H VC_OUT undervoltage hysteresis 0.42
UVLO_SEL connected to RTN 0.046
IVCOUT Startup current source VAPD-RTN = 2.5 V
VVDD ≥ 28 V, VVC_OUT-RTN = 13.6 V 21.5 26 29 mA
VVDD ≥ 10 V, VVC_OUT-RTN = 7 V 8 12.5 19
VVDD ≥ 8 V, VVC_OUT-RTN = 6.5 V 3.9 6.3 9.7
VVC_ST VC_OUT startup voltage Measure VVC_OUT during startup,
IVC_OUT = 0 mA		 13.8 15 V
Measure VVC_OUT during startup,
IVC_OUT = 22 mA		 13.5 15 V
VUVLO_SE VC_OUT UVLO select threshold to RTN 1.8 2.1 2.3 V
UVLO_SEL pullup current 14 20 25 µA
VVCIN_ON VC_IN rising threshold to turn on the VC switch to RTN 8 8.5 9 V
rVC VC switch on resistance VAPD-RTN = 2.5 V
VVDD ≥ 28 V, VVC_IN-RTN = 10 V 13.3 Ω
VVDD ≥ 20 V, VVC_IN-RTN = 10 V 15.5
tSTUP_OFF Startup current source turn off delay and TPH, TPL, BT turn on delay From when the VC switch turns on 20 24 28 ms
tSTUP_OUT Startup current source time out From startup source turn on to turn off 47.5 50 53 ms
MPS
MPS DC supply current Startup has completed, IRTN = 0 mA 0.8 mA
AMPS_CTL pulsed voltage Startup has completed, IRTN < 20 mA,
RMPS = 1 KΩ to 12 kΩ		 23.1 24 24.9 V
Automatic MPS falling current threshold Startup has completed, IRTN threshold to generate AMPS_CTL pulses 18 28 38 mA
Hysteresis on RTN current 1
MPS pulsed mode duty cycle for Type 1-2 PSE MPS pulsed current duty cycle 25.8% 26.1% 26.4%
MPS pulsed current ON time 76 81.5 87 ms
MPS pulsed current OFF time 230 250
MPS pulsed mode duty cycle for Type 3-4 PSE MPS pulsed current duty cycle,
RMPS_DUTY > 230 kΩ		 5.2% 5.43% 5.6%
MPS pulsed current ON time,
RMPS_DUTY > 230 kΩ		 14.5 15.0 15.7 ms
MPS pulsed current duty cycle,
RMPS_DUTY < 8 kΩ		 12.3% 12.5% 12.7%
MPS pulsed current ON time,
RMPS_DUTY < 8 kΩ		 36 37.5 39 ms
MPS pulsed current duty cycle,
43 kΩ < RMPS_DUTY < 77 kΩ		 7.9% 8.1% 8.3%
MPS pulsed current ON time,
43 kΩ < RMPS_DUTY < 77 kΩ		 22.2 23.1 24 ms
MPS pulsed current OFF time, RMPS_DUTY from 0 Ω to open circuit 250 263.5 277 ms
MPS_DUTY pullup current 14 17 20 µA
THERMAL SHUTDOWN
Shutdown TJ↑ 140 158 °C
Hysteresis (1) 20 °C
(1) Parameters provided for reference only, and do not constitute part of TI published specifications for purposes of TI product warranty.