JAJSE88F November   2017  – February 2024 UCC21220 , UCC21220A

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety-Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Thermal Derating Curves
    12. 6.12 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Minimum Pulses
    2. 7.2 Propagation Delay and Pulse Width Distortion
    3. 7.3 Rising and Falling Time
    4. 7.4 Input and Disable Response Time
    5. 7.5 Power-up UVLO Delay to OUTPUT
    6. 7.6 CMTI Testing
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 VDD, VCCI, and Under Voltage Lock Out (UVLO)
      2. 8.3.2 Input and Output Logic Table
      3. 8.3.3 Input Stage
      4. 8.3.4 Output Stage
      5. 8.3.5 Diode Structure in UCC21220 and UCC21220A
    4. 8.4 Device Functional Modes
      1. 8.4.1 Disable Pin
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Designing INA/INB Input Filter
        2. 9.2.2.2 Select External Bootstrap Diode and its Series Resistor
        3. 9.2.2.3 Gate Driver Output Resistor
        4. 9.2.2.4 Estimating Gate Driver Power Loss
        5. 9.2.2.5 Estimating Junction Temperature
        6. 9.2.2.6 Selecting VCCI, VDDA/B Capacitor
          1. 9.2.2.6.1 Selecting a VCCI Capacitor
          2. 9.2.2.6.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 9.2.2.6.3 Select a VDDB Capacitor
        7. 9.2.2.7 Application Circuits with Output Stage Negative Bias
      3. 9.2.3 Application Curves
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Component Placement Considerations
      2. 11.1.2 Grounding Considerations
      3. 11.1.3 High-Voltage Considerations
      4. 11.1.4 Thermal Considerations
    2. 11.2 Layout Example
  13. 12Device and Documentation Support
    1. 12.1 サード・パーティ製品に関する免責事項
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Receiving Notification of Documentation Updates
    4. 12.4 サポート・リソース
    5. 12.5 Trademarks
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 用語集
  14. 13Revision History
  15. 14Mechanical, Packaging, and Orderable Information

6.10 Switching Characteristics

VVCCI = 3.3 V or 5.5 V, 0.1-µF capacitor from VCCI to GND, VVDDA = VVDDB = 12 V, 1-µF capacitor from VDDA and VDDB to VSSA and VSSB, load capacitance COUT = 0 pF, TJ = –40°C to +125°C, unless otherwise noted(1).
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tRISE Output rise time, see Figure 7-4 CVDD = 10 µF, COUT = 1.8 nF,
VVDDA, VVDDB = 12 V, f = 1 kHz		 5 16 ns
tFALL Output fall time, see Figure 7-4 CVDD = 10 µF, COUT = 1.8 nF ,
VVDDA, VVDDB = 12 V, f = 1 kHz		 6 12 ns
tPWmin Minimum input pulse width that passes to output,
see Figure 7-1 and Figure 7-2		 Output does not change the state if input signal less than tPWmin 10 20 ns
tPDHL Propagation delay at falling edge, see Figure 7-3 INx high threshold, VINH, to 10% of the output 28 40 ns
tPDLH Propagation delay at rising edge, see Figure 7-3 INx low threshold, VINL, to 90% of the output 28 40 ns
tPWD Pulse width distortion in each channel, see Figure 7-3 |tPDLHA – tPDHLA|, |tPDLHB– tPDHLB| 5.5 ns
tDM Propagation delays matching,
|tPDLHA – tPDLHB|, |tPDHLA – tPDHLB|, see Figure 7-3		 f = 1 MHz 5 ns
tVCCI+ to OUT VCCI Power-up Delay Time: UVLO Rise to OUTA, OUTB,
See Figure 7-6		 INA or INB tied to VCCI 40 59 µs
tVDD+ to OUT VDDA, VDDB Power-up Delay Time: UVLO Rise to OUTA, OUTB
See Figure 7-7		 INA or INB tied to VCCI 22 35
|CMH| High-level common-mode transient immunity (See Section 7.6) Slew rate of GND vs. VSSA/B, INA and INB both are tied to GND or VCCI; VCM=1000 V; 100 V/ns
|CML| Low-level common-mode transient immunity (See Section 7.6) Slew rate of GND vs. VSSA/B, INA and INB both are tied to GND or VCCI; VCM=1000 V; 100
(1) Parameters that has only typical values, are not production tested and guaranteed by design.