JAJSFC3A April   2018  – December 2018 TPS563249

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      概略回路図
      2.      TPS563249の効率
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Adaptive On-Time Control and PWM Operation
      2. 7.3.2 Soft Start and Pre-Biased Soft Start
      3. 7.3.3 Current Protection
      4. 7.3.4 Undervoltage Lockout (UVLO) Protection
      5. 7.3.5 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Standby Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Output Voltage Resistors Selection
        2. 8.2.2.2 Output Filter Selection
        3. 8.2.2.3 Input Capacitor Selection
        4. 8.2.2.4 Bootstrap Capacitor Selection
        5. 8.2.2.5 Dropout
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11デバイスおよびドキュメントのサポート
    1. 11.1 ドキュメントの更新通知を受け取る方法
    2. 11.2 コミュニティ・リソース
    3. 11.3 商標
    4. 11.4 静電気放電に関する注意事項
    5. 11.5 Glossary
  12. 12メカニカル、パッケージ、および注文情報

6.5 Electrical Characteristics

TJ = –40°C to 125°C, VIN = 12 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
IVIN(SDN) Shutdown supply current VIN current, EN = 0 V, TJ = 25°C 2.5 10 µA
LOGIC THRESHOLD
VENH Enable threshold Rising 1.27 1.34 V
VENL Enable threshold Falling 1.08 1.15 V
REN EN pin resistance to GND VEN = 1 V 800 1000 1200 kΩ
VFB VOLTAGE AND DISCHARGE RESISTANCE
VFB FB voltage TJ = 25°C 594 600 606 mV
588 600 612 mV
IFB FB input current VFB = 0.7 V 0 ±50 nA
MOSFET
RDS(on)h High-side switch resistance TJ = 25°C 70 mΩ
RDS(on)l Low-side switch resistance TJ = 25°C 30 mΩ
CURRENT LIMIT
Iocl_h_source High side FET source Current limit 5.5 6.3 7.1 A
Iocl_l_source Low side FET source Current limit 3.1 3.9 4.7 A
Iocl_l_sink Low side FET sink Current limit 1.1 1.7 A
THERMAL SHUTDOWN
TSDN Thermal shutdown threshold(1) Shutdown temperature 160 °C
Hysteresis 25
ON-TIME TIMER CONTROL
tON(MIN) Minimum on time(1) VIN = 12 V, load = 3 A 50 ns
tOFF(MIN) Minimum off time 250 ns
SOFT START
tss Soft-start time Internal soft-start time 1.7 ms
FREQUENCY
Fsw Switching frequency 1250 1400 1550 kHz
OUTPUT UNDERVOLTAGE PROTECTION
VUVP Output UVP threshold Hiccup detect (H > L) 65%
tUVPDLY UVP propagation delay 0.36 ms
tHIC UVP protection Hiccup Time before restart 25 ms
UVLO
UVLO UVLO threshold Wake up VIN voltage 4.2 4.4 V
Shutdown VIN voltage 3.6 3.8
Hysteresis VIN voltage 0.4
(1) Not production tested.