JAJSFM7A May   2018  – June 2018 TLV7081

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      低電圧の検出
      2.      ISと電源電圧との関係
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Timing Diagrams
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Inputs
      2. 7.4.2 Internal Hysteresis
      3. 7.4.3 Output
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Nano-Power Battery Monitor
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Battery Monitoring in Portable Electronics
  9. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  10. 10デバイスおよびドキュメントのサポート
    1. 10.1 ドキュメントのサポート
      1. 10.1.1 関連資料
    2. 10.2 ドキュメントの更新通知を受け取る方法
    3. 10.3 コミュニティ・リソース
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  11. 11メカニカル、パッケージ、および注文情報

7.4.1 Inputs

The TLV7081 input extends from V- to 5.6 V which is independent of supply. The input IN can be any voltage within these limits and no phase inversion of the comparator output occurs.

The input of TLV7081 is fault tolerant. It maintains the same high input impedance when V+ is unpowered or ramping up. The input can be safely driven up to the specified maximum voltage (5.6 V) with V+ = 0 V or any value up to the maximum specified.

The input bias current is typically 3 pA for input IN voltages between 0 and 5.6 V. The comparator inputs are protected from undervoltage by internal diodes connected to V-. As the input voltage goes under V-, the protection diodes become forward biased and begin to conduct causing the input bias current to increase exponentially. Input bias current typically doubles for every 10°C temperature increase.