JAJSGA2F September 2018 – June 2021 TPS2663
PRODUCTION DATA
The internal, external FET and hence the load current can be switched off by pulling the SHDN pin below 0.8-V threshold with a micro-controller GPIO pin or can be controlled remotely with an opto-isolator device. The device quiescent current reduces to 21 μA (typical) in shutdown state. To assert SHDN low, the pull down must have sinking capability of at least 10 µA. To enable the device, SHDN must be pulled up to at least 2 V. Once the device is enabled, the internal FET turns on with dVdT mode. Figure 9-20 and Figure 9-13 illustrate the performance of SHDN control.
VIN = 24 V | C(dVdT) = 22 nF | RLOAD = 24 Ω |
VIN = 24 V | C(dVdT) = 22 nF | RLOAD = 24 Ω |