JAJSGH7B September   2006  – November 2018 TPS2376-H

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      代表的なアプリケーション回路
  4. 4 改訂履歴
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 ESD Ratings IEC
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Thermal Information
    6. 7.6 Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Undervoltage Lockout (UVLO)
      2. 8.3.2 Programmable Inrush Current Limit and Fixed Operational Current Limit
      3. 8.3.3 Power Good
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Internal Thresholds
      2. 9.1.2 Detection
      3. 9.1.3 Classification
    2. 9.2 Typical Application
      1. 9.2.1 External Components
        1. 9.2.1.1 Detection Resistor and UVLO Divider
        2. 9.2.1.2 Magnetics
        3. 9.2.1.3 Input Diodes or Diode Bridges
        4. 9.2.1.4 Input Capacitor
        5. 9.2.1.5 Load Capacitor
        6. 9.2.1.6 Transient Suppressor
  10. 10Power Supply Recommendations
    1. 10.1 Maintain Power Signature
    2. 10.2 DC/DC Converter Startup
    3. 10.3 Auxiliary Power Source ORing
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Protection
    4. 11.4 ESD
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントのサポート
      1. 12.1.1 関連資料
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報

9.2.1.6 Transient Suppressor

Voltage transients on the TPS2376-H can be caused by connecting or disconnecting the PD, or by other environmental conditions like ESD. A transient voltage suppressor, such as the SMAJ58A, should be installed after the bridge and across the TPS2376-H input as shown in Figure 13.

Some form of protection may be required from V(VDD-RTN) if adequate capacitance is not present. RTN is a high impedance node when the MOSFET is off. Some topologies may cause large transients to occur on this pin when the PD is plugged into an active supply.