JAJSGI6C September   2011  – January 2020 BQ24725A

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 改訂履歴
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 SMBus Interface
    4. 8.4 Device Functional Modes
      1. 8.4.1  Adapter Detect and ACOK Output
      2. 8.4.2  Adapter Over Voltage (ACOVP)
      3. 8.4.3  System Power Selection
      4. 8.4.4  Battery LEARN Cycle
      5. 8.4.5  Enable and Disable Charging
      6. 8.4.6  Automatic Internal Soft-Start Charger Current
      7. 8.4.7  High Accuracy Current Sense Amplifier
      8. 8.4.8  Charge Timeout
      9. 8.4.9  Converter Operation
      10. 8.4.10 Continuous Conduction Mode (CCM)
      11. 8.4.11 Discontinuous Conduction Mode (DCM)
      12. 8.4.12 Input Over Current Protection (ACOC)
      13. 8.4.13 Charge Over Current Protection (CHGOCP)
      14. 8.4.14 Battery Over Voltage Protection (BATOVP)
      15. 8.4.15 Battery Shorted to Ground (BATLOWV)
      16. 8.4.16 Thermal Shutdown Protection (TSHUT)
      17. 8.4.17 EMI Switching Frequency Adjust
      18. 8.4.18 Inductor Short, MOSFET Short Protection
    5. 8.5 Register Maps
      1. 8.5.1 Battery-Charger Commands
      2. 8.5.2 Setting Charger Options
        1. Table 3. Charge Options Register (0x12H)
      3. 8.5.3 Setting the Charge Current
        1. Table 4. Charge Current Register (0x14H), Using 10mΩ Sense Resistor
      4. 8.5.4 Setting the Charge Voltage
        1. Table 5. Charge Voltage Register (0x15H)
      5. 8.5.5 Setting Input Current
        1. Table 6. Input Current Register (0x3FH), Using 10mΩ Sense Resistor
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Typical System with Two NMOS Selector
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Negative Output Voltage Protection
          2. 9.2.1.2.2 Reverse Input Voltage Protection
          3. 9.2.1.2.3 Reduce Battery Quiescent Current
          4. 9.2.1.2.4 Inductor Selection
          5. 9.2.1.2.5 Input Capacitor
          6. 9.2.1.2.6 Output Capacitor
          7. 9.2.1.2.7 Power MOSFETs Selection
          8. 9.2.1.2.8 Input Filter Design
          9. 9.2.1.2.9 BQ24725A Design Guideline
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Simplified System without Power Path
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
        3. 9.2.2.3 Application Curves
    3. 9.3 System Examples
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デベロッパー・ネットワークの製品に関する免責事項
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 サポート・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報

9.2.1.2.7 Power MOSFETs Selection

Two external N-channel MOSFETs are used for a synchronous switching battery charger. The gate drivers are internally integrated into the IC with 6V of gate drive voltage. 30V or higher voltage rating MOSFETs are preferred for 19-20V input voltage.

Figure-of-merit (FOM) is usually used for selecting proper MOSFET based on a tradeoff between the conduction loss and switching loss. For the top side MOSFET, FOM is defined as the product of a MOSFET's on-resistance, RDS(ON), and the gate-to-drain charge, QGD. For the bottom side MOSFET, FOM is defined as the product of the MOSFET's on-resistance, RDS(ON), and the total gate charge, QG.

Equation 8. FOMtop = RDS(on) x QGD; FOMbottom = RDS(on) x QG

The lower the FOM value, the lower the total power loss. Usually lower RDS(ON) has higher cost with the same package size.

The top-side MOSFET loss includes conduction loss and switching loss. It is a function of duty cycle (D=VOUT/VIN), charging current (ICHG), MOSFET's on-resistance (RDS(ON)), input voltage (VIN), switching frequency (fS), turn on time (ton) and turn off time (toff):

Equation 9. BQ24725A eq9_lusa79.gif

The first item represents the conduction loss. Usually MOSFET RDS(ON) increases by 50% with 100°C junction temperature rise. The second term represents the switching loss. The MOSFET turn-on and turn-off times are given by:

Equation 10. BQ24725A eq10_lusa79.gif

where Qsw is the switching charge, Ion is the turn-on gate driving current and Ioff is the turn-off gate driving current. If the switching charge is not given in MOSFET datasheet, it can be estimated by gate-to-drain charge (QGD) and gate-to-source charge (QGS):

Equation 11. BQ24725A eq11_lusa79.gif

Gate driving current can be estimated by REGN voltage (VREGN), MOSFET plateau voltage (Vplt), total turn-on gate resistance (Ron) and turn-off gate resistance (Roff) of the gate driver:

Equation 12. BQ24725A eq12_lusa79.gif

The conduction loss of the bottom-side MOSFET is calculated with the following equation when it operates in synchronous continuous conduction mode:

Equation 13. Pbottom = (1 - D) x ICHG2 x RDS(on)

When charger operates in non-synchronous mode, the bottom-side MOSFET is off. As a result all the freewheeling current goes through the body-diode of the bottom-side MOSFET. The body diode power loss depends on its forward voltage drop (VF), non-synchronous mode charging current (INONSYNC), and duty cycle (D).

Equation 14. PD = VF x INONSYNC x (1 - D)

The maximum charging current in non-synchronous mode can be up to 0.25A for a 10mΩ charging current sensing resistor or 0.5A if battery voltage is below 2.5V. The minimum duty cycle happens at lowest battery voltage. Choose the bottom-side MOSFET with either an internal Schottky or body diode capable of carrying the maximum non-synchronous mode charging current.