JAJSPG4K september   2003  – april 2023 THS3091 , THS3095

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics: VS = ±15 V
    6. 7.6 Electrical Characteristics: VS = ±5 V
    7. 7.7 Typical Characteristics: ±15 V
    8. 7.8 Typical Characteristics: ±5 V
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Power-Down and Reference Pins Functionality
    4. 8.4 Device Functional Modes
      1. 8.4.1 Wideband, Noninverting Operation
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 PowerPAD Design Considerations
          1. 9.4.1.1.1 PowerPAD Layout Considerations
        2. 9.4.1.2 Power Dissipation and Thermal Considerations
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 ドキュメントの更新通知を受け取る方法
    4. 10.4 サポート・リソース
    5. 10.5 Trademarks
    6. 10.6 静電気放電に関する注意事項
    7. 10.7 用語集
  11. 11Mechanical, Packaging, and Orderable Information

7.4 Thermal Information

THERMAL METRIC(1) THS309x THS3091 UNIT
DDA (SO PowerPAD) DGN (HVSSOP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 58.4 60.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 72.0 87.2 °C/W
RθJB Junction-to-board thermal resistance 32.6 32.6 °C/W
ψJT Junction-to-top characterization parameter 13.2 7.8 °C/W
ψJB Junction-to-board characterization parameter 32.5 32.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 17.1 17.0 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.