JAJSUK6A May 2024 – October 2024 MSPM0L1227 , MSPM0L1228 , MSPM0L2227 , MSPM0L2228
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
Supply | ||||||
VDDPGM/ERASE | Program and erase supply voltage | 1.62 | 3.6 | V | ||
IDDERASE | Supply current from VDD during erase operation | Supply current delta | 10 | mA | ||
IDDPGM | Supply current from VDD during program operation | Supply current delta | 10 | mA | ||
Endurance | ||||||
NWEC(LOWER) | Erase/program cycle endurance (lower 32kB flash) (1) | 100 | k cycles | |||
NWEC(UPPER) | Erase/program cycle endurance (remaining flash) (1) | 10 | k cycles | |||
NE(MAX) | Total erase operations before failure (2) | 802 | k erase operations | |||
NW(MAX) | Write operations per word line before sector erase (3) | 83 | write operations | |||
Retention | ||||||
tRET_85 | Flash memory data retention | -40°C <= Tj <= 85°C | 60 | years | ||
tRET_105 | Flash memory data retention | -40°C <= Tj <= 105°C | 11.4 | years | ||
Program and Erase Timing | ||||||
tPROG (WORD, 64) | Program time for flash word (4) (6) | 50 | 275 | µs | ||
tPROG (SEC, 64) | Program time for 1kB sector (5) (6) | 6.4 | ms | |||
tERASE (SEC) | Sector erase time | <10k erase/program cycles | 20 | 200 | ms | |
tERASE (BANK) | Bank erase time | <10k erase/program cycles | 22 | 220 | ms |