JAJSVE0C May   2015  – July 2024 UCC27201A-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 説明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Diagrams
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Stages
      2. 6.3.2 UVLO (Under Voltage Lockout)
      3. 6.3.3 Level Shift
      4. 6.3.4 Boot Diode
      5. 6.3.5 Output Stages
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input Threshold Type
        2. 7.2.2.2 VDD Bias Supply Voltage
        3. 7.2.2.3 Peak Source and Sink Currents
        4. 7.2.2.4 Propagation Delay
        5. 7.2.2.5 Power Dissipation
      3. 7.2.3 Application Curves
  9. 8 Power Supply Recommendations
  10. 9 Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 サード・パーティ製品に関する免責事項
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 ドキュメントの更新通知を受け取る方法
    4. 10.4 サポート・リソース
    5. 10.5 Trademarks
    6. 10.6 静電気放電に関する注意事項
    7. 10.7 用語集
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

11 Revision History

Changes from Revision B (March 2016) to Revision C (July 2024)

  • デバイスの主な特長を反映するようにドキュメントのタイトルを変更。デバイスの特性を反映するように仕様の一部を更新Go
  • 「特長」セクションを更新：1) 最新の TI データシート標準に従うように HBM および CDM ESD 分類レベルを削除。2) 接合部温度範囲を -40℃～140℃から -40～150℃に変更。3) デバイスが生産中止されたため、DMK パッケージを削除。4) 伝搬遅延の標準値を 20ns から 22ns に変更。5)「1MHz を超える動作」の記述を削除 (このスイッチング周波数は規定のパラメータではないため)。6) ブートストラップ ダイオード抵抗の標準値を 0.6Ω から 0.65Ω に変更Go
  • 「アプリケーション」セクションを更新して代表的なアプリケーションの上位 5 つを記載Go
  • 「概要」セクションを更新：1) UCC27200 および UCC27201 製品との比較を削除。2) -18V HS の公差は絶対最大定格であることを明確化。3) DMK パッケージの記述を削除。Go
  • Updated Pin Configuration and Functions Functions section - deleted 10-pin VSON DMK package information and updated PowerPAD description.Go
  • Updated Absolute Maximum Ratings section to remove "Power dissipation at TA = 25°C" and "Lead temperature (soldering, 10s)". Power dissipation can be calculated with thermal metrics in "Thermal Information" table.Go
  • Updated Recommended Operating Conditions: Operating Junction Temperature maximum changed from 140°C to 150°C.Go
  • Updated Thermal Information section to reflect device characteristics. Go
  • Updated Supply Currents specifications in the Electrical Characteristics table: 1) IDD typical changed (From: 0.4mA. To: 0.11mA). 2) IDDO typical changed (From: 3.8mA. To: 1mA). 3) IDDO maximum changed (From: 5.5mA. To: 3mA. 4) IHB typical changed (From: 0.4mA. To: 0.065mA). 5) IHBO typical changed (From: 2.5mA. To: 0.9mA). 6) IHBO maximum changed (From: 4mA. To: 3mA). 7) IHBS test condition changed to match VHS maximum recommended operating conditions (From: 110V. To: 105V). 8) IHBSO typical changed (From: 0.1mA. To: 0.03mA).Go
  • Updated Input specifications in the Electrical Characteristics table: 1) VHIT specifications changed (From: 1.7V typical, 2.5V maximum. To: 1.9V minimum, 2.3V typical, 2.7V maximum). 2) VLIT specifications changed (From: 0.8V minimum, 1.6V typical. To: 1.3V minimum, 1.6V typical, 1.9V maximum). 3) VIHYS typical changed (From: 100mV. To: 700mV). 4) RIN specifications changed from (100kΩ minimum, 200kΩ typical, 350kΩ maximum. To: 68kΩ typical). Go
  • Updated Bootstrap diode specifications in the Electrical Characteristics table: 1) RD test conditions changed (From: 100mA and 80mA. To: 120mA and 100mA). 2) RD typical changed (From: 0.6Ω. To: 0.65Ω). Updated LO/HO Gate Driver specifications in the Electrical Characteristics table: 1) VLOL typical changed (From 0.18V. To 0.1V). 2) VLOH typical changed (From: 0.25V. To: 0.13V). Go
  • Removed specifications with test conditions "-40°C to 125°C TJ", since all parameters are specified from -40°C to 150°C TJ (unless otherwise noted). Go
  • Changed Propagation Delays typical specification (From: 20ns. To: 22ns).Go
  • Updated Output Rise and Fall Time specifications: 1) tR typical changed (From: 0.35us. To: 0.26us). 2) tF typical changed (From: 0.3us. To: 0.22us). Go
  • Updated timing diagramsGo
  • Updated all plots in Typical Characteristics section to reflect the device's typical specification. Go
  • Updated Input Stages section to match the input typical specification in the electrical characteristics table - changed 200kΩ pull-down resistance, 1.7V input rising threshold to 8kΩ pull-down resistance, 2.3V input rising threshold. Go
  • Updated Typical Application section to display a different application diagram, updated Design Requirements section, and updated Detailed Design procedure section since information in previous revision of data sheet had an outdated circuit with obsolete part numbers. Go
  • Changed application curves to display propagation delay and rise/fall time plots. Go
  • Changed Power Supply Recommendations section to correctly describe that LO is sourced from VDD and HO is souced from HB. Go

Changes from Revision A (October 2015) to Revision B (March 2016)

  • Added 10-Pin VSON DMK Package information.Go

Changes from Revision * (May 2015) to Revision A (October 2015)

  • Changed ILO = IHO = –100 mA condition to ILO = IHO = 100 mA Go
  • Changed ILO = IHO = 100 mA condition to ILO = IHO = –100 mA Go