SBOK054 December   2022 LMH5485-SEP

 

  1.   1
  2.   Trademarks
  3. 1Texas Instruments Enhanced Product Qualification and Reliability Report
  4. 2Space Enhanced Plastic Production Flow
  5. 3Qualification by Similarity (Qualification Family)
  6. 4Outgas Test Report

Qualification by Similarity (Qualification Family)

A new device can be qualified either by performing full scale quality and reliability test on the actual device or using one or more previously qualified devices through Qualification by Similarity (QBS) rules. By establishing similarity between the new device and those qualified previously, repetitive test will be eliminated, allowing for timely production release. When adopting QBS methodology, the emphasis is on qualifying the differences between a previously qualified product and the new product under consideration. The QBS rules for a technology, product, test parameter or package shall define which attributes are required to remain fixed in order for the QBS rules to apply. The attributes which are expected and allowed to vary will be reviewed and a QBS plan shall be developed, based on the reliability impact assessment above, specifying what subset of the full complement of environmental stresses is required to evaluate the reliability impact of those variations. Each new device shall be reviewed for the conformance to the QBS rule sets applicable to the device. For more information, see JEDEC JESD47.

Table 3-1 Device Baseline
TI Device:

LMH5485-SEP

Assembly Site:TI-MLA (Malaysia)
DLA VID:V62/21603Test Site: TI-MLA (Malaysia)
Wafer Fab:FFABPin/Package Type:DGK (VSSOP) | 8
Fab Process:BICOM3XLeadframe:Cu
Fab Technology:BICMOSTermination Finish:NiPdAu
Die Revision:Bond Wire:24.3 µm Au
Die Name: RTHS4541GB0H Moisture Sensitivity: MSL 3/ 260°C
ESD CDM:±1000 V
ESD HBM:±2500 V
1Baseline information in effect as of the date of this report
Table 3-2 Space Enhanced Products New Device Qualification Matrix
Note that qualification by similarity (“qualification family”) per JEDEC JESD47 is allowed
DescriptionConditionSample Size Used/RejectsLots RequiredTest Method
ElectromigrationMaximum Recommended Operating ConditionsN/AN/APer TI Design Rules
Wire Bond LifeMaximum Recommended Operating ConditionsN/AN/APer TI Design Rules
Electrical CharacterizationTI Data Sheet103N/A
Electrostatic Discharge SensitivityHBM3 units/voltage1EIA/JESD22-A114
CDMEIA/JESD22-C101
Latch-upPer Technology6/01EIA/JESD78
Physical DimensionsTI Data Sheet5/01EIA/JESD22- B100
Thermal ImpedanceTheta-JA on boardPer Pin-PackageN/AEIA/JESD51
Bias Life Test125°C / 1000 hours or equivalent77/03JESD22-A108*
Biased HAST130°C / 85% / 96 hours77/03JESD22-A110*
Extended Biased HAST130°C / 85% / 250 hours (for reference)77/01JESD22-A110*

Unbiased HAST

130°C / 85% / 96 hours77/03JESD22-A118*
Temperature Cycle-65°C to +150°C non-biased for 500 cycles77/03JESD22-A104*
Solder Heat260°C for 10 seconds22/01JESD22-B106

Resistance to Solvents

Ink symbol only

12/0

1

JESD22-B107

SolderabilityCondition A (steam age for 8 hours)22/01ANSI/J-STD-002-92
FlammabilityMethod A / Method B5/01UL-1964
Bond ShearPer wire size5 units x 30/0 bonds3JESD22-B116
Bond Pull StrengthPer wire size5 units x 30/0 bonds3ASTM F-459
Die ShearPer die size5/03TM 2019
High Temp Storage150 °C / 1,000 hours15/03JESD22-A103-A*
Moisture SensitivitySurface Mount Only121J-STD-020-A*
Radiation Response CharacterizationTotal Ionization Dose, and Single-Event Latchup5 units/dose level1MIL-STD-883/Method 1019
Outgassing CharacterizationTML (Total Mass Lost), CVCM (Collected Volatile Condensable material), WVR (Water vapor recorded)51ASTM E595
*Precondition performed per JEDEC Std. 22, Method A112/A113