SBOK083A August   2024  – October 2024 TMUX582F-SEP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1Overview
  5. 2Single-Event Effects (SEE)
  6. 3Test Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5Results
    1. 5.1 Single-Event Latch-Up (SEL) Results
    2. 5.2 Event Rate Calculations
    3. 5.3 Single-Event Transients (SET) Results
  9. 6Summary
  10. 7References
  11. 8Revision History

5.3 Single-Event Transients (SET) Results

SETs are defined as heavy-ion-induced transients upsets on VOUT of the TMUX582F-SEP. The species used for the SET testing was a Silver (Ag), a Krypton (Kr) and an Argon (Ar) with an angle-of-incidence of 0° for an LETEFF of 47.5, 30.1 and 8.54 MeV-cm2/ mg respectively. Flux of approximately 104 ions / cm2 * s and a fluence of approximately 106 ions / cm2 were used for all runs of SET testing.

VOUT SETs were characterized using a window trigger of ±10% around the nominal output voltage. The devices were characterized in three different voltage cases. The first used a 12V input voltage with a square wave on the A0 pin to toggle the device output on the D pin between S1 of 3V and S2 of 0V. The second used a 12V input voltage with the S8 pin selected for outputting a static voltage of 0V to the D pin. The third used a 12V input voltage and was setup in a fault protection case with the S1 pin at 60V to monitor proper performance of the two fault protection pins, SF and FF. To capture the SETs a NI PXIe-5110 scope card was used to continuously monitor the switching output on the D pin for the first bias scheme. The second and third bias schemes used a NI PXIe-5172 to monitor the D pin and SF/FF pins, respectively.

The scope triggering from VOUT was programmed to record 5k samples for bias #1 and 2k samples for bias #2 and #3 with a constant sample rate of 100 mega-samples per second (MS/s) in case of an event. The scope was programmed to record 20% of the data before the trigger.

Under heavy-ions, the TMUX582F-SEP exhibits transient upsets that were fully recoverable without the need for external intervention.

Test conditions and results are summarized in Table 5-6.

Table 5-3 Summary of TMUX582F-SEP Test Conditions and Results
Run NumberUnit NumberIonLETEFF (MeV-cm2/ mg

)

FLUX
(ions × cm2 * s)		Fluence
(ions / cm2)		Bias #

Trigger Value (%)

VOUTSET (#) ≥10%

1

1Ag47.51.0E+041.0E+06

1

10

113* (D pin)

2

1Ag47.51.0E+041.0E+06

1

20

905* (D pin)

3

2

Ag47.51.0E+041.0E+06

2

10

14 (D pin)

4

2Ag47.51.0E+041.0E+06

2

5

12 (D pin)

5

3

Ag47.51.0E+041.0E+06

3

10

16 (SF pin), 16 (FF pin)

6

3

Ag47.51.0E+041.0E+06

3

5

16 (SF pin), 14 (FF pin)

7

3

Kr

30.1

1.0E+041.0E+06

3

10

14 (SF pin), 14 (FF pin)

8

3

Kr

30.11.0E+041.0E+06

3

5

24 (SF pin), 23 (SF pin)

9

2

Kr

30.11.0E+041.0E+06

2

10

12 (D pin)

10

2

Kr

30.11.0E+041.0E+06

2

5

14 (D pin)

11

1

Kr

30.11.0E+041.0E+06

1

10

19 (D pin)

12

1

Kr

30.11.0E+041.0E+06

1

5

17 (D pin)

13

1

Ar

8.54

1.0E+041.0E+06

1

10

9 (D pin)

14

1

Ar

8.541.0E+041.0E+06

1

5

5 (D pin)

15

2

Ar

8.541.0E+041.0E+06

2

10

12 (D pin)

16

2

Ar

8.541.0E+041.0E+06

2

5

15 (D pin)

17

3

Ar

8.541.0E+041.0E+06

3

10

5 (SF pin), 5 (FF pin)

18

3

Ar

8.541.0E+041.0E+06

3

5

2 (SF pin), 2 (SF pin)

First 2 runs on the dynamic bias showed extra false transients during the run due to a noisy probe, issue was fixed with a better probe for the other 4 runs on the first bias scheme

TMUX582F-SEP Worst Case Transient Plot [Run#3 - D Pin]Figure 5-5 Worst Case Transient Plot [Run#3 - D Pin]
TMUX582F-SEP Worst Case Transient Plot #1 [Run #13 - D Pin]Figure 5-6 Worst Case Transient Plot #1 [Run #13 - D Pin]
TMUX582F-SEP Worst Case Transient Plot #2 [Run #13 - D Pin] Figure 5-7 Worst Case Transient Plot #2 [Run #13 - D Pin]
TMUX582F-SEP Worst Case Transient Plot [Run #19 - SF Pin] Figure 5-8 Worst Case Transient Plot [Run #19 - SF Pin]
TMUX582F-SEP Worst Case Transient Plot [Run #19 - FF Pin] Figure 5-9 Worst Case Transient Plot [Run #19 - FF Pin]

Using the MFTF method, the upper-bound cross section (using a 95% confidence level) is calculated for the different SETs as shown below.

Table 5-4 Upper Bound Cross Section at 95% Confidence Interval
SET Type ION Bias Scheme # UPSETS UPPER BOUND CROSS SECTION (cm2/device)
VOUTSET ≥ 10% Ag 2 14 2.349E-05
VOUTSET ≥ 10% Ag 3 32 4.517E-05
VOUTSET ≥ 10% Kr 1 19 2.967E-05
VOUTSET ≥ 10% Kr 2 12 2.096E-05
VOUTSET ≥ 10% Kr 3 28 4.047E-05
VOUTSET ≥ 10% Ar 1 9 1.708E-05
VOUTSET ≥ 10% Ar 2 12 2.096E-05
VOUTSET ≥ 10% Ar 3 10 1.839E-05
* Due to the inaccurate probe on Bias #1 at the Silver (Ag) level, the cross section is not considered