2 Single-Event Effects (SEE)

The primary single-event effect (SEE) event of interest in the TMUX582F-SEP is the destructive single-event latch-up. From a risk or impact perspective, the occurrence of an SEL is potentially the most destructive SEE event and the biggest concern for space applications. In mixed technologies such as the linear BiCMOS (LBCSOI2) process used for TMUX582F-SEP, the CMOS circuitry introduces a potential SEL susceptibility. SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-substrate and n-well and n+ and p+ contacts).

The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is latched) until power is removed or until the device is destroyed by the high-current state. The process modifications applied for SEL-mitigation were sufficient, as the TMUX582F-SEP exhibited no SEL with heavy-ions up to an LET_EFF of 43MeV-cm²/ mg at a fluence of 1 × 10⁷ ions / cm² at a chip temperature of 125°C.

The TMUX582F-SEP was characterized for SET at a flux of ~10⁴ ions / cm² * s and a fluence of ~10⁶ ions / cm² with a die temperature of about 25°C. The device was characterized with 3 different bias schemes shown below. Under these bias conditions, all recorded V_OUT voltage excursions self-recover with no external intervention.

Figure 2-1 Functional Block Diagram of the TMUX582F-SEP