SBOK092 December   2024 OPA4H199-SP

 

  1.   1
  2.   2
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects (SEE)
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
  11. 8 Single-Event Transients (SET)
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A Total Ionizing Dose from SEE Experiments
  15.   B References

2 Single-Event Effects (SEE)

The primary concern for the OPA4H199-SP is the robustness against the destructive single-event effects (DSEE): single-event latch-up (SEL). In mixed technologies such as the BiCMOS process used on the OPA4H199-SP, the CMOS circuitry introduces a potential for SEL susceptibility.

SEL can occur if excess current injection caused by the passage of an energetic ion is high enough to trigger the formation of a parasitic cross-coupled PNP and NPN bipolar structure (formed between the p-sub and n-well and n+ and p+ contacts) [1] [2]. The parasitic bipolar structure initiated by a single-event creates a high-conductance path (inducing a steady-state current that is typically orders-of-magnitude higher than the normal operating current) between power and ground that persists (is latched) until power is removed, the device is reset, or until the device is destroyed by the high-current state. The OPA4H199-SP was tested for SEL at the maximum recommended supply voltage of 40V. The input common-mode voltage (VIN) was set to be equal to the supply voltage during testing. The device was configured as a buffer amplifier with the output pin connected to the inverting input pin. During testing of the devices, the OPA4H199-SP did not exhibit any SEL with heavy-ions with LETEFF = 65MeV × cm2 / mg at flux of approximately 5 × 104 ions / cm2 × s, fluence of approximately 107 ions / cm2, and a die temperature of ~125°C.

Another concern on high reliability and performance applications is the single-events-transient (SET) characteristic of the device. The OPA4H199-SP SET performance was characterized up to LETEFF = 65MeV-cm2 /mg. The device was characterized for SET at supply voltage of 40V under DC input conditions. Test conditions and results are discussed in Table 8-2.