SCDK004A June   2024  – November 2024 TMUX582F-SEP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Bias Diagrams
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characterization Summary Results
    2. 3.2 Specification Compliance Matrix
  7. 4Reference Documents
  8. 5Revision History
  9. 6Appendix A: HDR TID Report Data
  10. 7Appendix B: ELDRS Characterization TID Report Data
  11. 8Appendix C: HDR 22V
  12. 9Appendix D: HDR 60V

2.3.1 Bias Diagrams

Figure 2-1 shows the bias conditions for each pin during the standard HDR and LDR characterization. Figure 2-2 shows the bias conditions for each pin during the 22V RLAT characterization at 30krad. Figure 2-3 shows the bias conditions for each pin during a 60V fault condition.

TMUX582F-SEP TMUX582F-SEP Biased Diagram for Main HDR/LDR CharacterizationFigure 2-1 TMUX582F-SEP Biased Diagram for Main HDR/LDR Characterization
TMUX582F-SEP TMUX582F-SEP Biased Diagram for 22V S1 Pin Stress [RLAT]Figure 2-2 TMUX582F-SEP Biased Diagram for 22V S1 Pin Stress [RLAT]
TMUX582F-SEP TMUX582F-SEP Biased Diagram for 60V S1 Pin StressFigure 2-3 TMUX582F-SEP Biased Diagram for 60V S1 Pin Stress