SCDK004A June   2024  – November 2024 TMUX582F-SEP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Bias Diagrams
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characterization Summary Results
    2. 3.2 Specification Compliance Matrix
  7. 4Reference Documents
  8. 5Revision History
  9. 6Appendix A: HDR TID Report Data
  10. 7Appendix B: ELDRS Characterization TID Report Data
  11. 8Appendix C: HDR 22V
  12. 9Appendix D: HDR 60V

2.4 Test Configuration and Condition

The main HDR and LDR irradiation characterization was performed at 10krad, 20krad and 30krad. The units that were irradiated to 30krad(Si) were annealed at 25ºC for 72 hours. ATE parametric testing was completed before and after the anneal.

The extra 22V S1 pin HDR stress was performed at 30krad without the need for anneal and will be the RLAT specification bias for each wafer lot going forward. The extra 60V S1 pin HDR stress was also performed at 30krad without the need for anneal. This extra case was added to test the device under a fault scenario.

Table 2-1 HDR Characterization Device Information
Control GroupHDR = 191.178 rad(Si)/s
Total Samples: 4Total Samples: 5 Biased / TID Level
Exposure Levels
0krad(Si)

10krad(Si)

20krad(Si)

30krad(Si)
Biased

Biased

Biased

BiasedBiased + 72 hour anneal
1 - 4

5 - 9

10 - 14

15 - 1920 - 24
Table 2-2 LDR Characterization Device Information

Control Group

LDR = 9.94e-03 rad(Si)/s

Total Samples: 4

Total Samples: 5 Biased

Exposure Levels

0krad(Si)

10krad(Si)

20krad(Si)

30krad(Si)

Biased

Biased

Biased

Biased

1 - 4

5 - 9

10 - 14

15 - 19