SCDK004A June   2024  – November 2024 TMUX582F-SEP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Bias Diagrams
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characterization Summary Results
    2. 3.2 Specification Compliance Matrix
  7. 4Reference Documents
  8. 5Revision History
  9. 6Appendix A: HDR TID Report Data
  10. 7Appendix B: ELDRS Characterization TID Report Data
  11. 8Appendix C: HDR 22V
  12. 9Appendix D: HDR 60V

Test Description and Facilities

The TMUX582F-SEP LDR exposure was performed on biased and unbiased devices in a Co-60 gamma cell at VPT testing facilities in Chelmsford, Massachusetts. The un-attenuated dose rate of this cell is 9.94e-03 rad(Si)/s. After exposure, the devices were shipped back to Texas Instruments and full post radiation electrical evaluation using Texas Instruments ATE was conducted and shipped back to VPT within a 72 hour window. ATE test limits are set per data sheet electrical limits based on qualification and characterization data.

The TMUX582F-SEP HDR exposure was performed on biased devices in a Co-60 gamma cell at a TI facility in Dallas, Texas. The un-attenuated dose rate of this cell is 191.178rad(Si)/s. After exposure, the devices were packed in dry ice (per MIL-STD-883 Method 1019.9 section 3.10) and full post radiation electrical evaluation using Texas Instruments ATE was conducted. ATE test limits are set per data sheet electrical limits based on qualification and characterization data. Post radiation measurements were taken within 30 minutes of removing the devices from the dry ice container. The devices were allowed to reach room temperature prior to electrical post radiation measurements.