SCDK004A June   2024  – November 2024 TMUX582F-SEP

PRODUCTION DATA  

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Device Information
    1. 1.1 Device Details
  5. 2Total Dose Test Setup
    1. 2.1 Test Overview
    2. 2.2 Test Description and Facilities
    3. 2.3 Test Setup Details
      1. 2.3.1 Bias Diagrams
    4. 2.4 Test Configuration and Condition
  6. 3TID Characterization Test Results
    1. 3.1 TID Characterization Summary Results
    2. 3.2 Specification Compliance Matrix
  7. 4Reference Documents
  8. 5Revision History
  9. 6Appendix A: HDR TID Report Data
  10. 7Appendix B: ELDRS Characterization TID Report Data
  11. 8Appendix C: HDR 22V
  12. 9Appendix D: HDR 60V

Abstract

This report covers the radiation characterization results of the TMUX582F-SEP multiplexer. The study was done to determine Total Ionizing Dose (TID) effects under high dose rate (HDR) and low dose rate (LDR) up to 30krad(Si) as a one-time characterization. The results show that all samples passed within the specified limits up to 30krad(Si). Radiation Lot Acceptance Testing (RLAT) will be performed using 5 units at a dose level of 30krad(Si) for future wafer lots. Furthermore, the TMUX582F-SEP is in a plastic package for low outgassing characteristics and is Single Event Latch-Up (SEL) immune up to 43MeV-cm2/mg, which makes the device an option for low earth orbit space applications. The device is a fault protected CMOS multiplexer flexible enough to handle a diversity of applications, from system monitoring, to power-up sequencing protection, to high precision front end data acquisition.