SLVK145 august 2023 TPS7H2201-SEP
PRODUCTION DATA
The TPS7H2201-SEP is a radiation-tolerant, 1.5-V to 7-V input, 6-A, single channel eFuse. The device provides reverse current protection, overvoltage protection, and a configurable rise time. The device contains a P-channel MOSFET which operates over the full input range and supports the maximum 6-A of continuous current. The switch is controlled through the active-high Enable (EN) input pin, which is capable of interfacing directly with low-voltage control signals.
The device is offered in a 32-pin plastic package (HTSSOP). Table 1-1 lists general device information and test conditions. For more detailed technical specifications, user's guides, and application notes, please go to the TPS7H2201-SEP product page.
Description(1) | Device Information |
---|---|
TI part number | TPS7H2201-SEP |
Orderable number | TPS7H2201MDAPTSEP |
Device function | eFuse |
Technology | 250-nm linear BiCMOS 7 (LBC7) |
Exposure facility | Radiation Effects Facility, Cyclotron Institute, Texas A&M University (15 MeV/nucleon) |
Heavy ion fluence per run | ≈ 1 × 107 ions/cm2 |
Irradiation temperature | 25°C (for SEB testing), 25°C (for SET testing), and 125°C (for SEL testing) |