SLVK145 august   2023 TPS7H2201-SEP

PRODUCTION DATA  

  1.   1
  2.   Single-Event Effects Test Report of the TPS7H2201-SEP eFuse
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-Up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
    1. 8.1 Single Event Transients
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A References

7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results

During the SEB/SEGR characterization, the device was tested at room temperature ≈ 25°C. The die temperature was verified using a FLIR IR-camera.

The species used for the SEB testing was Silver (109Ag) ion with an angle-of-incedence of 0° for an LETEFF = 48 MeV·cm2/mg (for more details, see Depth, Range, and LET EFF Calculation). The kinetic energy in the vacuum is 1.634 GeV (15-MeV/amu line). Flux of approximately 105 ions/cm2·s and a fluence of approximately 107 ions/cm2 were used for the three runs. Run duration to achieve this fluence was approximately two minutes (per 1 × 107 ions·cm2). The TPS7H2201-SEP was tested under enabled and disabled modes. The device was disabled by forcing 0 V on the EN pin with a E36311A power supply. The E-Load was connected, even when the device was disabled, to help differentiate if an SET momentarily activated the device under the heavy-ion irradiation. During SEB/SEGR testing using the 109Ag ion with the device disabled/enabled no VOUT transient or input current event was observed. This indicates that the TPS7H2201-SEP is SEB/SEGR free, up to LETEFF = 48 MeV·cm2/mg.Table 8-3 lists the SEB test conditions and results. .Figure 7-2 shows a plot of the current vs time for run # 4 (enabled) and Figure 7-3 for run #5 (disabled).

Table 7-2 Summary of TPS7H2201-SEP SEB/SEGR Test Condition and Results For all runs the device was enabled and loaded with ≈ 6 amps. During all runs not a single device was damaged.
Run NumberUnit NumberIonLETEFF (MeV·cm2/mg)Flux (ions·cm2/s)Fluence (ions·cm2)VIN (V)

EN

41109Ag484.78 × 1041.00 × 1077Yes
51109Ag483.75 × 1041.00 × 1077No
62109Ag481.20 × 1051.00 × 1077Yes
72109Ag481.20 × 1051.00 × 1077No
83109Ag481.20 × 1051.00 × 1077Yes
93109Ag481.20 × 1059.96 × 1067No

Using the MFTF method described in SLVK047 and combining (or summing) the fluences of the runs with the same categories as described on the columns the SEB/SEGR upper-bound cross-section (using a 95% confidence level) is calculated as:

Equation 2. σSEB ≤6.19 x 10-8cm2devicefor LETEFF=48 MeV∙cm2mgand T=25°C
GUID-20230810-SS0I-P6H8-NFDH-L3N0DSNN8LVT-low.svgFigure 7-2 Current vs Time for Run # 4 (Enabled) for the TPS7H2201-SEP at T = 25°C
GUID-20230810-SS0I-ZMM2-MH86-WZQ7D0P38RDN-low.svgFigure 7-3 Current vs Time for Run # 5 (Disabled) for the TPS7H2201-SEP at T = 25°C