SLVK146 august   2023 TPS7H2211-SEP

PRODUCTION DATA  

  1.   1
  2.   Single-Event Effects Test Report of the TPS7H2211-SEP eFuse
  3.   Trademarks
  4. 1 Introduction
  5. 2 Single-Event Effects
  6. 3 Device and Test Board Information
  7. 4 Irradiation Facility and Setup
  8. 5 Depth, Range, and LETEFF Calculation
  9. 6 Test Setup and Procedures
  10. 7 Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-Up (SEL) Results
    2. 7.2 Single-Event Burnout (SEB) and Single-Event Gate Rupture (SEGR) Results
  11. 8 Single-Event Transients (SET)
    1. 8.1 Single Event Transients
  12. 9 Event Rate Calculations
  13. 10Summary
  14.   A
  15.   B References

5 Depth, Range, and LETEFF Calculation

GUID-20230814-SS0I-BVVG-NP3H-ZD4Q67FKBRWJ-low.svg Figure 5-1 Generalized Cross-Section of the LBC7 Technology BEOL Stack on the TPS7H2211-SEP (Left) and SEUSS 2020 Application Used to Determine Key Ion Parameters (Right)

The TPS7H2211-SEP is fabricated in the TI Linear BiCMOS 7 (LBC7, 250-nm process with a Back-End-Of-Line (BEOL) stack consisting of four levels of standard thickness aluminum metal. The total stack height from the surface of the passivation to the silicon surface is 13.5 μm based on nominal layer thickness as shown in Figure 5-1. Accounting for energy loss through the 1-mil thick Aramica beam port window, the 40-mm air gap and the BEOL stack over the TPS7H2211-SEP, the effective LET (LETEFF) at the surface of the silicon substrate, the depth, and the ion range was determined with the SEUSS 2020 Software (provided by the Texas A&M Cyclotron Institute and based on the latest SRIM-2013 (7) models). Table 5-1 lists the results. The stack was modeled as a homogeneous layer of silicon dioxide (valid since SiO2 and aluminum density are similar).

Table 5-1 Praseodymium and Homium Ion LETEFF Depth and Range in Silicon
Ion TypeAngle of Incidence (°)RangeEFF in Silicon (µm)LETEFF (MeV·cm2/mg)
109Ag091.648