SLVSER3A November 2018 – April 2020 TPS65982BB
PRODUCTION DATA.
The TPS65982BB device has both a central thermal shutdown to the chip and a local thermal shutdown for the power-path block. The central thermal shutdown monitors the temperature of the center of the die and disables all functions except for supervisory circuitry. This shutdown also halts digital core when die temperature goes above a rising temperature of TSD_MAIN. The temperature shutdown has a hysteresis of TSDH_MAIN and when the temperature falls back below this value, the device resumes normal operation. The power-path block has a local thermal-shutdown circuit to detect an overtemperature condition because of overcurrent, and quickly turns off the power switches. The power-path thermal shutdown values are TSD_PWR and TSDH_PWR. The output of the thermal shutdown circuit is deglitched by TSD_DG before triggering. The thermal shutdown circuits generate interrupt events to the digital core.