SLVUCM2A january   2023  – july 2023 TPSF12C3 , TPSF12C3-Q1

 

  1.   1
  2.   Description
  3.   Get Started
  4.   Features
  5.   Applications
  6.   6
  7. 1Evaluation Module Overview
    1. 1.1 Introduction
    2. 1.2 Kit Contents
    3. 1.3 Specifications
    4. 1.4 Device Information
  8. 2Hardware
    1. 2.1 EVM Description
    2. 2.2 Setup
      1. 2.2.1 High-Voltage Testing
      2. 2.2.2 EVM Connections
      3. 2.2.3 Low-Voltage Testing
    3. 2.3 Header Information
    4. 2.4 EVM Performance Validation
    5. 2.5 AEF Design Flow
      1. 2.5.1 AEF Circuit Optimization and Debug
  9. 3Implementation Results
    1. 3.1 EMI Performance
    2. 3.2 Insertion Loss
    3. 3.3 Surge Immunity
    4. 3.4 SENSE and INJ Voltages
  10. 4Hardware Design Files
    1. 4.1 Schematic
    2. 4.2 Bill of Materials
    3. 4.3 PCB Layout
      1. 4.3.1 Assembly Drawings
      2. 4.3.2 Multi-Layer Stackup
  11. 5Compliance Information
    1. 5.1 Compliance and Certifications
  12. 6Additional Information
    1.     Trademarks
  13. 7Related Documentation
    1. 7.1 Supplemental Content
  14. 8Revision History

1.3 Specifications

Table 2-1 lists the EVM specifications. VVDD = 12 V, unless otherwise noted.

Table 1-1 Electrical Performance Specifications
PARAMETERCONDITIONSMINTYPMAXUNIT
INPUT CHARACTERISTICS
VDD supply voltage, VVDD(1)81216V
VDD UVLO turn-on threshold, VVDD(on)VVDD rising7.7
VDD UVLO turn-off threshold, VVDD(off)VVDD falling6.7
VDD supply current, enabled, IVDD(on)EN open or tied high12.5mA
VDD supply current, disabled, IVDD(off)EN tied to GND50µA
OUTPUT CHARACTERISTICS
Inject voltage, VINJ(2)2.5VVDD – 2V
Inject current, IINJVVDD = 8 V to 16 V –8080mA
SYSTEM CHARACTERISTICS
Common-mode EMI reduction(3)100 kHz to 1 MHz25dB
IC junction temperature, TJ(4)–40150°C
(1) The nominal supply voltage (relative to chassis GND) of the TPSF12C3 is 12 V.
(2) Verify that the INJ pin voltage swing is between the prescribed limits to avoid saturation and clipping.
(3) The expected EMI reduction with this EVM is up to 30 dB (with the device enabled vs. disabled) when swept from 100 kHz to 3 MHz. This performance metric can change based on the VDD supply voltage, passive filter component values, active circuit compensation and damping component values, ambient temperature, and other parameters.
(4) Calculate the TPSF12C3 operating junction temperature based on the VDD supply voltage and current, the local ambient temperature, and the junction-to-ambient thermal resistance: TJ = TA + RθJA × PD, where the IC power dissipation is PD = VVDD × IVDD.