3 B_OP and B_RP Thresholds

Another key specification for Hall-effect latches is the threshold for B_OP or B_RP. These specifications dictate what field strength is required for the device output to go high or low. The region between these thresholds is the hysteresis region where the last crossed threshold state is maintained. The lower the device thresholds, the further the device can be spaced from the ring magnet.

To illustrate the impact, Figure 3-2 show the regions within a plane indicated in Figure 3-1 spaced 3 mm from the outer radial surface of a 10-pole, 400-mT Br, 1.59-mm inner diameter, 37.8579-mm outer diameter magnet where devices can be placed for encoding measurements. With each decrease in the B_OP and B_RP threshold, there is an increase in the possible device placement region size.