8 Single-Event Transients (SET)

The primary focus of SETs were heavy-ion-induced transient upsets on the output signals HO and LO (with a 1nF capacitive load on the outputs as seen in block diagram). SET testing was done at room temperature across two ion species, ¹⁰⁹Ag (TAMU) and ¹²⁹Xe (MSU) which produced a range of LET_EFF of 48 to 50.5MeV×cm²/mg for more details, see Ion LET_EFF, Depth, and Range in Silicon. HO and LO were monitored by two different scopes, a NI PXIe-5110 and a MSO58B oscilloscope. During PWM and IIM_SW mode testing, each scope was configured to trigger based on an outside pulse width measurement, where the window for the output signal was 20% (±200ns). During the IIM_ST modes, the same two scopes were used, however, the trigger was a window which was 500mV above or 500mV below 0V with the signals AC-coupled. The signals in this mode were monitored to see if the signal ever went low when the signal was supposed to have been high, or high when supposed to have been low. During all SET testing, there was no cross-conduction in either PWM or IIM mode. For all SET testing no SET/SEFI events were observed during the twelve runs, indicating that the TPS7H60x5-SEP is SET/SEFI-free up to LET_EFF = 50.5 MeV×cm²/mg and across the full electrical specifications. During all SET/SEFI testing there were no overshoot events observed indicating that the TPS7H60x5-SEP is also overshoot free up to LET_EFF = 50.5 MeV×cm²/mg and across the full electrical specifications.

Waveform size, sample rate, trigger type, value, and signal for all scopes used is listed in Table 8-1.