SNOU180A June   2021  – September 2021 LM74701-Q1

 

  1.   Trademarks
  2. 1Introduction
  3. 2Setup
    1. 2.1 I/O Connector Description
    2. 2.2 Board Setup
    3. 2.3 Schematic
  4. 3LM74701-Q1EVM Performance Capture
    1. 3.1 LM74701-Q1EVM Startup
    2. 3.2 Startup Reverse Polarity (–12 V)
    3. 3.3 ISO 7637-2 Pulse 1 Performance
  5. 4EVM Board Assembly Drawings and Layout Guidelines
    1. 4.1 PCB Drawings
    2. 4.2 Bill of Materials
  6. 5Revision History

1 Introduction

The LM74701-Q1 evaluation module (LM74701-Q1EVM) helps designers evaluate the operation and performance of the LM74701-Q1 ideal diode controller with integrated VDS clamp. This evaluation module demonstrates how an N-channel power MOSFET can emulate a very-low forward voltage diode with low IQ and low-leakage current flowing through the IC. In this design scheme, the LM74701-Q1 is combined with a MOSFET and used in series with a battery as a replacement for a Schottky diode and PFET, in reverse-polarity protection circuitry as shown in Figure 2-1. For more information on the LM74701-Q1 functional and electrical characteristics, see LM74701-Q1 "TVS Less" Low IQ Reverse Battery Protection Ideal Diode Controller data sheet.