SNOU186 September   2021 LM74720-Q1 , LM74722-Q1

 

  1.   Trademarks
  2. 1Introduction
    1. 1.1 Features
    2. 1.2 Applications
  3. 2Description
    1. 2.1 Input Power and Load (J1/J5 and J2/J6, J8/J12 and J9/J13):
    2. 2.2 Enable Control (J4 and J11):
    3. 2.3 Two Back-to-Back Connected MOSFETs (Q1/Q3-Q2/Q4 and M1/M3-M2/M4):
    4. 2.4 Output Slew Rate Control (R3 and C4, R10 and C13):
    5. 2.5 Output Schottky Diode (D3, D8) and LED Indication (D4, D10) :
    6. 2.6 TVS Selection for 12-V Battery Protection:
    7. 2.7 TVS Selection for 24-V Battery Protection:
    8. 2.8 Test Points:
  4. 3Schematic
  5. 4Test Equipment Requirements
    1. 4.1 Power Supplies
    2. 4.2 Meters
    3. 4.3 Oscilloscope
    4. 4.4 Loads
  6. 5Test Setup and Results
    1. 5.1 Initial Setup
    2. 5.2 Power Up
    3. 5.3 Enable Control
    4. 5.4 Hot-Plug and Disable using EN
    5. 5.5 Inrush Current Control
    6. 5.6 Load Response
  7. 6Board Layout and Bill of Materials
    1. 6.1 Board Layout
    2. 6.2 Bill of Materials

Bill of Materials

Table 6-1 Bill or Materials

Designator

Quantity

Value

Description

Package Reference

Part Number

Manufacturer

C1, C10

2

0.1 uF

CAP, CERM, 0.1 µF, 100 V,+/- 10%, X7R, AEC-Q200 Grade 1, 0603

603

HMK107B7104KAHT

Taiyo Yuden

C4, C13

2

0.01 uF

CAP, CERM, 0.01 uF, 100 V, +/- 10%, X7R, AEC-Q200 Grade 1, 0603

603

CGA3E2X7R2A103K080AA

TDK

C6, C17

2

2.2 uF

CAP, CERM, 2.2 uF, 50 V, +/- 10%, X7R, AEC-Q200 Grade 1, 0805

805

CGA4J3X7R1H225K125AB

TDK

C7, C14

2

47 uF

CAP, AL, 47 uF, 63 V, +/- 20%, 0.65 ohm, AEC-Q200 Grade 2, SMD

SMT Radial F

EEE-FK1J470P

Panasonic

C8, C9, C12, C19

4

1 uF

CAP, CERM, 1 uF, 50 V, +/- 10%, X7R, AEC-Q200 Grade 1, 0805

805

CGA4J3X7R1H105K125AB

TDK

C11

1

1 uF

CAP, CERM, 1 uF, 100 V, +/- 10%, X7S, AEC-Q200 Grade 1, 0805

805

CGA4J3X7S2A105K125AB

TDK

D1, D5

2

Zener Diode 18V 250mW ±2% Surface Mount TO-236AB

SOT23

BZX84-B18,215

Nexperia

D2, D7

2

Diode TVS Single Bi-Dir 36V 600W 2-Pin SMB

DO-214AA

SMBJ36CA

Littelfuse

D3, D8

2

70V

Diode, Schottky, 70 V, 1 A, SMA

SMA

B170-13-F

Diodes Inc.

D4, D10

2

Green

LED, Green, SMD

1.6x0.8x0.8mm

LTST-C190GKT

Lite-On

J1, J2, J5, J6, J7, J8, J9, J12, J13

9

Standard Banana Jack, Uninsulated, 8.9mm

Keystone575-8

575-8

Keystone

J3, J10

2

Header, 100mil, 2x1, Tin, TH

Header, 2 PIN, 100mil, Tin

PEC02SAAN

Sullins Connector Solutions

J4, J11

2

Header, 100mil, 3x1, Tin, TH

Header, 3 PIN, 100mil, Tin

PEC03SAAN

Sullins Connector Solutions

L_Boost1, L_Boost2

2

100 uH

Inductor, Shielded, Composite, 100 uH, 0.17 A, 8.48 ohm, SMD

XPL2010

XPL2010-104MLB

Coilcraft

M1, M2

2

Power MOSFET 60 V, 2.4 mΩ, 155 A, Single N-Channel

LFPAK8

NVMJS2D5N06CLTWG

ON Semiconductor

Q1, Q2

2

60 V

MOSFET, N-CH, 60 V, 100 A, AEC-Q101, SOT669

SOT669

BUK7Y4R8-60EX

Nexperia

R2, R4, R11, R12

4

0

RES, 0, 5%, 0.1 W, AEC-Q200 Grade 0, 0402

402

ERJ-2GE0R00X

Panasonic

R3, R10

2

100

RES, 100, 5%, 0.1 W, AEC-Q200 Grade 0, 0603

603

CRCW0603100RJNEA

Vishay-Dale

R5, R13

2

12 k

RES, 12 k, 5%, 0.1 W, AEC-Q200 Grade 0, 0603

603

CRCW060312K0JNEA

Vishay-Dale

R6, R14

2

3.48 k

RES, 3.48 k, 1%, 0.1 W, AEC-Q200 Grade 0, 0603

603

CRCW06033K48FKEA

Vishay-Dale

R7, R15

2

9.1 k

RES, 9.1 k, 5%, 0.1 W, AEC-Q200 Grade 0, 0603

603

CRCW06039K10JNEA

Vishay-Dale

R8, R16

2

91 k

RES, 91 k, 5%, 0.1 W, AEC-Q200 Grade 0, 0603

603

CRCW060391K0JNEA

Vishay-Dale

R17

1

200

RES, 200, 5%, 0.25 W, AEC-Q200 Grade 0, 1206

1206

CRCW1206200RJNEA

Vishay-Dale

SH-J3, SH-J4, SH-J10, SH-J11

4

1x2

Shunt, 100mil, Flash Gold, Black

Closed Top 100mil Shunt

SPC02SYAN

Sullins Connector Solutions

TP1, TP2, TP4, TP5, TP10, TP11, TP13, TP14

8

TEST POINT SLOTTED .118", TH

Test point, TH Slot Test point

1040

Keystone

TP3, TP6, TP7, TP8, TP9, TP12, TP15, TP16, TP17, TP18

10

Test Point, Miniature, Orange, TH

Orange Miniature Testpoint

5003

Keystone

U1

1

Low IQ Ideal Diode Controller With Active Rectification

WSON12

LM74720QDRRQ1

Texas Instruments

U2

1

Low IQ Ideal Diode Controller With Active Rectification

WSON12

LM74722QDRRQ1

Texas Instruments

C2

0

1 uF

CAP, CERM, 1 uF, 100 V, +/- 10%, X7S, AEC-Q200 Grade 1, 0805

805

CGA4J3X7S2A105K125AB

TDK

C3, C5, C16, C18

0

1 uF

CAP, CERM, 1 uF, 50 V, +/- 10%, X7R, AEC-Q200 Grade 1, 0805

805

CGA4J3X7R1H105K125AB

TDK

C15

0

220 uF

CAP, AL, 220 uF, 63 V, +/- 20%, 0.16 ohm, AEC-Q200 Grade 2, SMD

SMT Radial H13

EEV-FK1J221Q

Panasonic

D6

0

33 V

Diode, TVS, Uni, 33 V, 53.3 Vc, SMB

SMB

SMBJ33A-13-F

Diodes Inc.

D9

0

16 V

Diode, TVS, Uni, 16 V, 26 Vc, SMB

SMB

SMBJ16A-13-F

Diodes Inc.

L1

0

1 uH

Inductor, Shielded, Composite, 1 uH, 43.5 A, 0.001 ohm, SMD

Inductor, 11.3x10x10mm

XAL1010-102MEB

Coilcraft

M3, M4

0

Power MOSFET 60 V, 2.4 mΩ, 155 A, Single N-Channel

LFPAK8

NVMJS2D5N06CLTWG

ON Semiconductor

Q3, Q4

0

60 V

MOSFET, N-CH, 60 V, 100 A, AEC-Q101, SOT669

SOT669

BUK7Y4R8-60EX

Nexperia

R1

0

0

RES, 0, 5%, 1 W, AEC-Q200 Grade 0, 2512

2512

CRCW25120000Z0EG

Vishay-Dale

R9

0

200

RES, 200, 5%, 0.25 W, AEC-Q200 Grade 0, 1206

1206

CRCW1206200RJNEA

Vishay-Dale