SNVU739A October   2020  – August 2021 LM5157-Q1

 

  1.   Trademarks
  2. 1Features and Electrical Performance
    1. 1.1 Electrical Parameters
    2. 1.2 Configuration Points
  3. 2Application Schematic
  4. 3EVM Picture
  5. 4Test Setup and Procedure
    1. 4.1 Test Setup
    2. 4.2 Test Equipment
  6. 5Test Results
    1. 5.1 Efficiency Curve
    2. 5.2 Load Regulation Curve
    3. 5.3 Thermal Performance
    4. 5.4 Steady State Waveforms
    5. 5.5 Start-Up Waveforms
    6. 5.6 Load Transient Waveforms
    7. 5.7 AC Loop Response Curves
  7. 6Design Files
    1. 6.1 Schematic
    2. 6.2 Bill of Materials
  8. 7Revision History

6.2 Bill of Materials

Table 6-1 lists the EVM bill of materials.

Table 6-1 LM5157EVM-BST Bill of Materials
DESIGNATOR QTY VALUE DESCRIPTION PACKAGE REFERENCE PART NUMBER MANUFACTURER
C2 1 22 μF CAP, AL, 22 μF, 100 V, ±20%, 1.3 Ω, AEC-Q200 Grade 2, SMD SMT Radial F EEE-FK2A220P Panasonic
C3 1 1000 pF CAP, CERM, 1000 pF, 50 V, ±10%, X7R, 0603 603 C0603X102K5RACTU Kemet
C4, C19, C20 3 0.1 μF CAP, CERM, 0.1 µF, 50 V, ±10%, X7R, AEC-Q200 Grade 1, 0603 603 C0603C104K5RACAUTO Kemet
C5, C26 2 0.01 μF CAP, CERM, 0.01 μF, 50 V, ±10%, X7R, 0603 603 C0603X103K5RACTU Kemet
C6, C7, C8, C9, C10 5 10 μF CAP, CERM, 10 μF, 50 V, ±10%, X7R, 1210 1210 GRM32ER71H106KA12L MuRata
C13, C14, C15, C16, C17, C18 6 4.7 μF CAP, CERM, 4.7 μF, 50 V, ±10%, X7R, AEC-Q200 Grade 1, 1210 1210 CGA6P3X7R1H475K250AB TDK
C21 1 1 μF CAP, CERM, 1 µF, 16 V,±10%, X7R, AEC-Q200 Grade 1, 0603 603 CGA3E1X7R1C105K080AC TDK
C22 1 0.1 μF CAP, CERM, 0.1 μF, 100 V,±10%, X7R, AEC-Q200 Grade 1, 0603 603 GCJ188R72A104KA01D MuRata
C25 1 0.022 μF CAP, CERM, 0.022 μF, 50 V, ±10%, X7R, 0603 603 C0603X223K5RACTU Kemet
C27 1 100 pF CAP, CERM, 100 pF, 50 V, ±5%, C0G/NP0, AEC-Q200 Grade 0, 0603 603 CGA3E2NP01H101J080AA TDK
D1 1 45 V Diode, Schottky, 45 V, 10 A, AEC-Q101, CFP15 CFP15 PMEG045V100EPDAZ Nexperia
D2, D3 2 60 V Diode, Schottky, 60 V, 1 A, SOD-123F SOD-123F PMEG6010CEH,115 Nexperia
L2 1 1.5 μH Inductor, Shielded, Composite, 1.5 μH, 14 A, 0.01052 Ω, AEC-Q200 Grade 1, SMD XEL6030-152MEB Coilcraft
Q1 1 100 V MOSFET, N-CH, 100 V, 0.17 A, SOT-23 SOT-23 BSS123 Fairchild Semiconductor
R1 1 0 RES, 0, 5%, 2 W, 2512 WIDE 2512 WIDE RCL12250000Z0EG Vishay Draloric
R3, R4, R9, R15 4 0 RES, 0, 5%, 0.1 W, 0603 603 RC0603JR-070RL Yageo
R5 1 61.9 k RES, 61.9 k, 1%, 0.1 W, 0603 603 RC0603FR-0761K9L Yageo
R6 1 4.99 RES, 4.99, 1%, 0.1 W, 0603 603 RC0603FR-074R99L Yageo
R7 1 10 RES, 10.0, 1%, 0.1 W, 0603 603 RC0603FR-0710RL Yageo
R8 1 49.9 k RES, 49.9 k, 1%, 0.1 W, 0603 603 RC0603FR-0749K9L Yageo
R11, R20 2 100 k RES, 100 k, 1%, 0.1 W, 0603 603 RC0603FR-07100KL Yageo
R12 1 71.5 k RES, 71.5 k, 1%, 0.1 W, 0603 603 RC0603FR-0771K5L Yageo
R13 1 4.53 k RES, 4.53 k, 1%, 0.1 W, 0603 603 RC0603FR-074K53L Yageo
R14 1 9.53 k RES, 9.53 k, 1%, 0.1 W, 0603 603 RC0603FR-079K53L Yageo
R16 1 37.4 k RES, 37.4 k, 1%, 0.1 W, 0603 603 RC0603FR-0737K4L Yageo
R17 1 10.0 k RES, 10.0 k, 1%, 0.1 W, 0603 603 RC0603FR-0710KL Yageo
R18 1 62.0 k RES, 62.0 k, 1%, 0.1 W, 0603 603 RC0603FR-0762KL Yageo
R19 1 2.61 k RES, 2.61 k, 1%, 0.1 W, 0603 603 RC0603FR-072K61L Yageo
U1 1 2.2-MHz Wide VIN Boost/Sepic/Flyback Converter with Dual Random Spread Spectrum, RTE0016K (WQFN-16) RTE0016K LM5157QRTERQ1 Texas Instruments